- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄180233 > M59DR032F100N1T (NUMONYX) 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48 PDF資料下載
參數(shù)資料
| 型號(hào)： | M59DR032F100N1T |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48 |
| 封裝： | 12 X 20 MM, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 1/38頁 |
| 文件大小： | 270K |
| 代理商： | M59DR032F100N1T |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁
1/38
PRELIMINARY DATA
October 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M59DR032A
M59DR032B
32 Mbit (2Mb x16, Dual Bank, Page) Low Voltage Flash Memory
s
SUPPLY VOLTAGE
–VDD = VDDQ = 1.65V to 2.2V: for Program,
Erase and Read
–VPP = 12V: optional Supply Voltage for fast
Program and Erase
s
ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 words
– Page Access: 35ns
– Random Access: 100ns
s
PROGRAMMING TIME
– 10s by Word typical
– Double Word Programming Option
s
MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit - 28 Mbit
– Parameter Blocks (Top or Bottom location)
– Main Blocks
s
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
s
BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power Up
– Any combination of Blocks can be protected
–WP for Block Locking
s
COMMON FLASH INTERFACE (CFI)
s
64 bit SECURITY CODE
s
ERASE SUSPEND and RESUME MODES
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
s
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M59DR032A: A0h
– Device Code, M59DR032B: A1h
BGA
TSOP48 (N)
12 x 20mm
FBGA48 (ZB)
8 x 6 solder balls
Figure 1. Logic Diagram
AI02544B
21
A0-A20
W
DQ0-DQ15
VDD
M59DR032A
M59DR032B
E
VSS
16
G
RP
WP
VDDQ VPP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5F7924 | 24 V FIXED NEGATIVE REGULATOR, PSFM3 |
| M5F7920 | 20 V FIXED NEGATIVE REGULATOR, PSFM3 |
| M5F7918 | 18 V FIXED NEGATIVE REGULATOR, PSFM3 |
| M5F7915 | 15 V FIXED NEGATIVE REGULATOR, PSFM3 |
| M5F7910 | 10 V FIXED NEGATIVE REGULATOR, PSFM3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR032F100N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F120N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F120N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。