參數(shù)資料
型號(hào)： M58WR064HU70ZB6U
元件分類： PROM
英文描述： 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
封裝： 7.70 X 9 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44
文件頁數(shù)： 114/117頁
文件大?。?/td> 2300K
代理商： M58WR064HU70ZB6U
Common Flash Interface
M58WR064HU M58WR064HL
Table 41.
Bank and erase block region 1 information(1)
M58WR064HU
M58WR064HL
Description
Offset
Data
Offset
Data
(P+1A)h = 53h 0Fh
(P+1A)h = 53h
01h
Number of identical banks within Bank Region 1
(P+1B)h = 54h 00h
(P+1B)h = 54h
00h
(P+1C)h = 55h 11h
(P+1C)h = 55h
11h
Number of program or erase operations allowed in
Bank Region 1:
Bits 0-3: Number of simultaneous program
operations
Bits 4-7: Number of simultaneous erase operations
(P+1D)h = 56h 00h
(P+1D)h = 56h
00h
Number of program or erase operations allowed in
other banks while a bank in same region is
programming
Bits 0-3: Number of simultaneous program
operations
Bits 4-7: Number of simultaneous erase operations
(P+1E)h = 57h 00h
(P+1E)h = 57h
00h
Number of program or erase operations allowed in
other banks while a bank in this region is erasing
Bits 0-3: Number of simultaneous program
operations
Bits 4-7: Number of simultaneous erase operations
(P+1F)h = 58h 01h
(P+1F)h = 58h
02h
Types of erase block regions in Bank Region 1
n = number of erase block regions with contiguous
same-size erase blocks.
Symmetrically blocked banks have one blocking
region.(2)
(P+20)h = 59h 07h
(P+20)h = 59h
07h
Bank Region 1 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase
blocks
Bits 16-31: n×256 = number of bytes in erase block
region
(P+21)h = 5Ah 00h
(P+21)h = 5Ah
00h
(P+22)h = 5Bh 00h
(P+22)h = 5Bh
20h
(P+23)h = 5Ch 01h
(P+23)h = 5Ch
00h
(P+24)h = 5Dh 64h
(P+24)h = 5Dh
64h
Bank Region 1 (Erase Block Type 1)
Minimum block erase cycles × 1000
(P+25)h = 5Eh 00h
(P+25)h = 5Eh
00h
(P+26)h = 5Fh 01h
(P+26)h = 5Fh
01h
Bank Region 1 (Erase Block Type 1): BIts per cell,
internal ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved 5Eh 01 5Eh 01
(P+27)h = 60h 03h
(P+27)h = 60h
03h
Bank Region 1 (Erase Block Type 1): Page mode
and synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
相關(guān)PDF資料
PDF描述
M59DR032F100N1T 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48
M5F7924 24 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7920 20 V FIXED NEGATIVE REGULATOR, PSFM3
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M5F7915 15 V FIXED NEGATIVE REGULATOR, PSFM3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR064KB70ZB6E 制造商:Micron Technology Inc 功能描述:WIRELESS FLASH VFBGA 7.7X9.0X1.0 56 8X7 0.75 - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 56VFBGA
M58WR064KB70ZB6F 制造商:Micron Technology Inc 功能描述:FLASH 28F640W18TD 60 VF-PBGA56 SB48 EX - Tape and Reel
M58WR064KB70ZB6F TR 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 56VFBGA
M58WR064KB7AZB6E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 56VFBGA
M58WR064KB7AZB6F 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
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