參數(shù)資料
型號： KBE00F005A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb NAND*2 + 256Mb Mobile SDRAM*2
中文描述： 的512Mb的NAND * 2 256Mb的移動SDRAM * 2
文件頁數(shù)： 46/87頁
文件大?。?/td> 1353K
代理商： KBE00F005A
KBE00F005A-D411
MCP MEMORY
June 2005
46
Revision 1.0
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85
°
C)
NOTES :
1. VIH (max) = 2.2V AC.The overshoot voltage duration is
≤
3ns.
2. VIL (min) = -1.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
VIN
≤
VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
4. Dout is disabled, 0V
≤
VOUT
≤
VDDQ.
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
1.7
1.8
1.95
V
V
DDQ
1.7
1.8
1.95
V
Input logic high voltage
V
IH
0.8 x V
DDQ
1.8
V
DDQ
+ 0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.3
V
2
Output logic high voltage
V
OH
V
DDQ
-0.2
-
-
V
I
OH
= -0.1mA
Output logic low voltage
V
OL
-
-
0.2
V
I
OL
= 0.1mA
Input leakage current
I
LI
-2
-
2
uA
3
CAPACITANCE
(V
DD
= 1.8V, T
A
= 23
°
C, f = 1MHz, V
REF
=0.9V
±
50 mV)
Pin
Symbol
Min
Max
Unit
Note
Clock
C
CLK
2.5
6
pF
CS
C
IN
1.5
3
pF
RAS, CAS, WE, CKE
C
IN
2.5
6
pF
DQM
C
IN
2.5
6
pF
Address
C
ADD
2.5
6
pF
DQ
0
~ DQ
31
C
OUT
5
10
pF
ABSOLUTE MAXIMUM RATINGS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
ss
V
IN
, V
OUT
-1.0 ~ 2.6
V
Voltage on V
DD
supply relative to V
ss
V
DD
, V
DDQ
-1.0 ~ 2.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1.0
W
Short circuit current
I
OS
50
mA
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