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參數(shù)資料
| 型號(hào)： | KBE00F005A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb NAND*2 + 256Mb Mobile SDRAM*2 |
| 中文描述： | 的512Mb的NAND * 2 256Mb的移動(dòng)SDRAM * 2 |
| 文件頁(yè)數(shù)： | 42/87頁(yè) |
| 文件大?。?/td> | 1353K |
| 代理商： | KBE00F005A |
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KBE00F005A-D411
MCP MEMORY
June 2005
42
Revision 1.0
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 25). Its value can be
determined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp
Figure 22. Rp vs tr ,tf & Rp vs ibusy
ibusy
Busy
Ready Vcc
VOH
tf
tr
VOL
C
L
0.4V, V
OH
: Vcc
Q
-0.4V
t
I
Rp(ohm)
Ibusy
tr
@ Vcc = 2.7V, Ta = 25
°
C , C
L
= 30pF
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
30
tf
60
90
120
2.3
2.3
2.3
2.3
2.3
1.1
0.75
0.55
where I
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
Rp value guidance
Rp(min, 2.7V part) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
2.5V
3mA
+
Σ
I
L
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| KBE00F005A-D411 | 512Mb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00S003M | 1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00S003M-D411 | 1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KBE00F005A-D411 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00G003M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2 |
| KBE00G003M-D411 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2 |
| KBE00S003M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00S003M-D411 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
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