參數(shù)資料
型號(hào): KBE00F005A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Mb NAND*2 + 256Mb Mobile SDRAM*2
中文描述: 的512Mb的NAND * 2 256Mb的移動(dòng)SDRAM * 2
文件頁數(shù): 40/87頁
文件大?。?/td> 1353K
代理商: KBE00F005A
KBE00F005A-D411
MCP MEMORY
June 2005
40
Revision 1.0
Figure 20. Read ID Operation 1
CE
CLE
I/O
0
~
7
ALE
RE
WE
90h
00h
ECh
Address. 1cycle
Maker code
t
CEA
t
AR
t
REA
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacture code(ECh), and the device code*, Reserved(A5h), Multi plane operation
code(C0h) respectively. A5h must be don’t-cared. C0h means that device supports Multi Plane operation but must be don’t-cared for
1.8V device. The command register remains in Read ID mode until further commands are issued to it. Figure 20 shows the operation
sequence.
A5h
C0h
Multi-Plane code
t
WHR
79h
Device code
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