參數(shù)資料
型號(hào)： KBE00F005A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb NAND*2 + 256Mb Mobile SDRAM*2
中文描述： 的512Mb的NAND * 2 256Mb的移動(dòng)SDRAM * 2
文件頁(yè)數(shù)： 39/87頁(yè)
文件大小： 1353K
代理商： KBE00F005A
KBE00F005A-D411
MCP MEMORY
June 2005
39
Revision 1.0
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 4 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00h or 50h) should be given before sequential page read cycle.
For Read Status of Multi Plane Program/Erase, the Read Multi-Plane Status command(71h) should be used to find out whether
multi-plane program or erase operation is completed, and whether the program or erase operation is completed successfully. The
pass/fail status data must be checked only in the Ready condition after the completion of Multi-Plane program or erase operation.
Table4. Read Staus Register Definition
NOTE
:
1. I/O 0 describes combined Pass/Fail condition for all planes. If any of the selected multiple pages/blocks fails in Program/
Erase operation, it sets "Fail" flag.
2. The pass/fail status applies only to the corresponding plane.
I/O No.
Status
Definition by 70h Command
Definition by 71h Command
I/O 0
Total Pass/Fail
Pass : "0" Fail : "1"
Pass : "0"
(1)
Fail : "1"
I/O 1
Plane 0 Pass/Fail
Must be don’t -cared
Pass : "0"
(2)
Fail : "1"
I/O 2
Plane 1 Pass/Fail
Must be don’t -cared
Pass : "0"
(2)
Fail : "1"
I/O 3
Plane 2 Pass/Fail
Must be don’t -cared
Pass : "0"
(2)
Fail : "1"
I/O 4
Plane 3 Pass/Fail
Must be don’t -cared
Pass : "0"
(2)
Fail : "1"
I/O 5
Reserved
Must be don’t -cared
Must be don’t-cared
I/O 6
Device Operation
Busy : "0" Ready : "1"
Busy : "0" Ready : "1"
I/O 7
Write Protect
Protected : "0" Not Protected : "1"
Protected : "0" Not Protected : "1"
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KBE00F005A-D411 512Mb NAND*2 + 256Mb Mobile SDRAM*2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KBE00F005A-D411 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb NAND*2 + 256Mb Mobile SDRAM*2
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KBE00G003M-D411 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2
KBE00S003M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S003M-D411 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
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