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參數(shù)資料
| 型號： | K9K8G08U0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory |
| 中文描述： | 1克× 8位/第二代× 8位NAND閃存 |
| 文件頁數(shù)： | 43/49頁 |
| 文件大小： | 1215K |
| 代理商： | K9K8G08U0M |
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FLASH MEMORY
43
Preliminary
K9
WA
G08U1M
K9K8G08U0M
Figure 14. Two-Plane Page Program
80h
11h
Data
Input
Plane 0
(2048 Block)
Block 0
Block 2
Block 4094
Block 4092
80h
I/O
0
~
7
R/B
Address & Data Input
11h
81h
10h
t
DBSY
t
PROG
70h
Address & Data Input
NOTE
: 1. It is noticeable that same row address except for A
18
is applied to the two blocks
2.Any command between 11h and 81h is prohibited except 70h and FFh.
81h
10h
Plane 1
(2048 Block)
Block 1
Block 3
Block 4095
Block 4093
Figure 15. Two-Plane Block Erase Operation
60h
I/O
X
R/B
60h
D0h
I/O 0
Pass
Fail
t
BERS
Address (3 Cycle)
Address (3 Cycle)
70h
"0"
"1"
A
12
~ A
17 :
Fixed ’Low’
A
18 :
Fixed ’Low’
A
19
~ A
29 :
Fixed ’Low’
A
30 :
Valid
A
12
~ A
17 :
Fixed ’Low’
A
18 :
Fixed ’High’
A
19
~ A
29 :
valid
must be same as previous A
A
30 :
Must be same as previous A
30
Two-Plane Block Erase
Basic concept of Two-Plane Block Erase operation is identical to that of Two-Plane Page Program. Up to two blocks, one from each
plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command(60h) followed by
three address cycles) may be repeated up to twice for erasing up to two blocks. Only one block should be selected from each plane.
The Erase Confirm command(D0h) initiates the actual erasing process. The completion is detected by monitoring R/B pin or Ready/
Busy status bit (I/O 6).
Two-plane erase operations can be executed by dividing the memory array into plane 0~1 or plane 2~3 separately.
For example, two-plane erase operation into plane 0 and plane 2 is prohibited. That is to say, two-plane erase operation into plane 0
and plane 1 or into plane 2 and plane 3 is allowed.
A
0
~ A
11 :
Valid
A
12
~ A
17 :
Fixed ’Low’
A
18 :
Fixed ’Low’
A
19
~ A
29 :
Fixed ’Low’
A
30 :
Valid
A
0
~ A
11 :
Valid
A
12
~ A
17 :
Valid
A
18 :
Fixed ’High’
A
19
~ A
29 :
Valid
A
30 :
Must be same as previous A
30
NOTE
: It is an example for two-plane page program into plane 0~1(In this case, A
30
is low), and the method for two-plane page program into
plane 2 ~3 is same. two-plane page program into plane 0&2(or plane 0&3, or plane 1&2, or plane 1&3) is prohibited.
NOTE
: Two-plane block erase into plane 0&2(or plane 0&3, or plane 1&2, or plane 1&3) is prohibited.
Note2
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PDF描述 |
|---|---|
| K9WAG08U1M | 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory |
| K9S2808V0B | TV 29C 29#16 PIN RECP |
| K9S6408V0B | SmartMedia CARD |
| K9S6408V0C | SmartMedia CARD |
| K9S3208V0A | 4M x 8 bit SmartMedia Card |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K8G08U0M-PCB0000 | 制造商:Samsung Semiconductor 功能描述: |
| K9K8G08U1A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9K8G08U1A-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9K8G08U1M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| K9K8G08UOA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory |
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