參數(shù)資料
型號(hào): K9K8G08U0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
中文描述: 1克× 8位/第二代× 8位NAND閃存
文件頁數(shù): 24/49頁
文件大小: 1215K
代理商: K9K8G08U0M
FLASH MEMORY
24
Preliminary
K9
WA
G08U1M
K9K8G08U0M
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte
data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or
audio applications which use slow cycle time on the order of
μ
-seconds, de-activating CE during the data-loading and serial access
would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Address(5Cycles)
80h
Data Input
CE
CLE
ALE
WE
Data Input
CE don’t-care
10h
Address(5Cycle)
00h
CE
CLE
ALE
WE
Data Output(serial access)
CE don’t-care
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
0
~
7
Figure 5. Read Operation with CE don’t-care.
30h
I/Ox
I/Ox
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