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參數(shù)資料
| 型號： | K9K8G08U0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory |
| 中文描述： | 1克× 8位/第二代× 8位NAND閃存 |
| 文件頁數(shù)： | 11/49頁 |
| 文件大?。?/td> | 1215K |
| 代理商： | K9K8G08U0M |
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FLASH MEMORY
11
Preliminary
K9
WA
G08U1M
K9K8G08U0M
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: 1. V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less.
2. Typical value is measured at Vcc=3.3V, T
A
=25
°
C. Not 100% tested.
3. The typical value of the K9WAG08U1M’s
I
SB
2
is 40
μ
A
and the maximum value is 200
μ
A.
4. The maximum value of K9WAG08U1M-Y,P’s I
LI
and I
LO
is
±40
μ
A
,
the maximum value of K9WAG08U1M-I’s I
LI
and I
LO
is
±20
μ
A
.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Page Read with
Serial Access
I
CC
1
tRC=25ns
CE=V
IL,
I
OUT
=0mA
-
15
30
mA
Program
I
CC
2
-
Erase
I
CC
3
-
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
20
100
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±20
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±20
Input High Voltage
V
IH
(1)
-
0.8xVcc
-
Vcc+0.3
V
Input Low Voltage, All inputs
V
IL
(1)
-
-0.3
-
0.2xVcc
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9XXG08UXM-XCB0
:
T
A
=0 to 70
°
C, K9XXG08UXM-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
V
CC
-0.6 to +4.6
V
V
IN
-0.6 to +4.6
V
I/O
-0.6 to Vcc+0.3 (<4.6V)
Temperature Under Bias
K9XXG08UXM-XCB0
T
BIAS
-10 to +125
°
C
K9XXG08UXM-XIB0
-40 to +125
Storage Temperature
K9XXG08UXM-XCB0
T
STG
-65 to +150
°
C
K9XXG08UXM-XIB0
Short Circuit Current
I
OS
5
mA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9K8G08U0M-PCB0000 | 制造商:Samsung Semiconductor 功能描述: |
| K9K8G08U1A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9K8G08U1A-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9K8G08U1M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| K9K8G08UOA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory |
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