參數(shù)資料
型號(hào)： K9K8G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
中文描述： 1克× 8位/第二代× 8位NAND閃存
文件頁(yè)數(shù)： 13/49頁(yè)
文件大?。?/td> 1215K
代理商： K9K8G08U0M
FLASH MEMORY
13
Preliminary
K9
WA
G08U1M
K9K8G08U0M
AC Timing Characteristics for Command / Address / Data Input
NOTES :
1. The transition of the corresponding control pins must occur only once while WE is held low
2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle
Parameter
Symbol
Min
Max
Unit
CLE Setup Time
t
CLS
(1)
12
-
ns
CLE Hold Time
t
CLH
5
-
ns
CE Setup Time
t
CS
(1)
20
-
ns
CE Hold Time
t
CH
5
-
ns
WE Pulse Width
t
WP
12
-
ns
ALE Setup Time
t
ALS
(1)
12
-
ns
ALE Hold Time
t
ALH
5
-
ns
Data Setup Time
t
DS
(1)
12
-
ns
Data Hold Time
t
DH
5
-
ns
Write Cycle Time
t
WC
25
-
ns
WE High Hold Time
t
WH
10
-
ns
Address to Data Loading Time
t
ADL
(2)
70
-
ns
Program / Erase Characteristics
NOTE
: 1. Typical value is measured at Vcc=3.3V, T
A
=25
°
C. Not 100% tested.
2. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 3.3V Vcc and 25
°
C tempera-
ture
.
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
200
700
μ
s
Dummy Busy Time for Two-Plane Page Program
t
DBSY
-
0.5
1
μ
s
Number of Partial Program Cycles
Nop
-
-
4
cycles
Block Erase Time
t
BERS
-
1.5
2
ms
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K8G08U0M-PCB0000 制造商:Samsung Semiconductor 功能描述:
K9K8G08U1A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9K8G08U1A-I 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9K8G08U1M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9K8G08UOA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
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