參數(shù)資料
型號(hào)： K9K8G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
中文描述： 1克× 8位/第二代× 8位NAND閃存
文件頁(yè)數(shù)： 18/49頁(yè)
文件大小： 1215K
代理商： K9K8G08U0M
FLASH MEMORY
18
Preliminary
K9
WA
G08U1M
K9K8G08U0M
NAND Flash Technical Notes
(Continued)
Copy-Back Operation with EDC & Sector Definition for EDC
Generally, copy-back program is very powerful to move data stored in a page without utilizing any external memory. But, if the source
page has one bit error due to charge loss or charge gain, then without EDC, the copy-back program operation could also accumulate
bit errors.
K9K8G08U0M supports copy-back with EDC to prevent cumulative bit errors. To make EDC valid, the page program operation
should be performed on either whole page(2112byte) or sector(528byte).
EDC status bits are not available for sectors within
which some bits or bytes are modified by Random Data Input operation. However, in case of the one time 528 byte sector
unit modification at the same address, EDC status bits are available.
A 2,112-byte page is composed of 4 sectors of 528-byte and each 528-byte sector is composed of 512-byte main area and 16-byte
spare area.
"A" area
(1’st sector)
512 Byte
"H" area
(4’th sector)
Main Field (2,048 Byte)
16 Byte
"G" area
(3’rd sector)
16 Byte
"F" area
(2’nd sector)
16 Byte
"E" area
(1’st sector)
16 Byte
"B" area
(2’nd sector)
512 Byte
"C" area
(3’rd sector)
512 Byte
"D" area
(4’th sector)
512 Byte
Spare Field (64 Byte)
Table 2. Definition of the 528-Byte Sector
Sector
Main Field (Column 0~2,047)
Spare Field (Column 2,048~2,111)
Area Name
Column Address
Area Name
Column Address
1’st 528-Byte Sector
"A"
0 ~ 511
"E"
2,048 ~ 2,063
2’nd 528-Byte Sector
"B"
512 ~ 1,023
"F"
2,064 ~ 2,079
3’rd 528-Byte Sector
"C"
1,024 ~ 1,535
"G"
2,080 ~ 2,095
4’th 528-Byte Sector
"D"
1,536 ~ 2,047
"H"
2,096 ~ 2,111
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most sig-
nificant bit) pages of the block. Random page address programming is prohibited.
From the LSB page to MSB page
DATA IN: Data (1)
Data (64)
(1)
(2)
(3)
(32)
(64)
Data register
Page 0
Page 1
Page 2
Page 31
Page 63
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
Data (64)
(2)
(32)
(3)
(1)
(64)
Data register
Page 0
Page 1
Page 2
Page 31
Page 63
Addressing for program operation
:
:
:
:
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K8G08U0M-PCB0000 制造商:Samsung Semiconductor 功能描述:
K9K8G08U1A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9K8G08U1A-I 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9K8G08U1M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9K8G08UOA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
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