參數(shù)資料
型號(hào)： K9K8G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
中文描述： 1克× 8位/第二代× 8位NAND閃存
文件頁(yè)數(shù)： 40/49頁(yè)
文件大小： 1215K
代理商： K9K8G08U0M
FLASH MEMORY
40
Preliminary
K9
WA
G08U1M
K9K8G08U0M
Figure 7. Random Data Output In a Page
Address
5Cycles
00h
Data Output
R/B
RE
t
R
30h
Address
2Cycles
05h
E0h
Data Output
Data Field
Spare Field
Data Field
Spare Field
I/Ox
Col. Add.1,2 & Row Add.1,2,3
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programming of a word or consecutive
bytes up to 2,112, in a single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation must not exceed 4 times for a single page. The addressing should be done in sequential
order in a block. A page program cycle consists of a serial data loading period in which up to 2,112bytes of data may be loaded into
the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the five cycle address inputs and
then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data
input in a page. The column address for the next data, which will be entered, may be changed to the address which follows random
data input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page.
EDC status bits are not available for sectors within which some bits or bytes are modified by Random Data Input operation.
However, in case of the 528 byte sector unit modification, EDC status bits are available.
The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the
serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and tim-
ings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the
Read Status Register command may be entered to read the status register. The system controller can detect the completion of a pro-
gram cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset
command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be
checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command
register remains in Read Status command mode until another valid command is written to the command register.
Figure 8. Program & Read Status Operation
80h
R/B
Address & Data Input
I/O
0
Pass
Data
10h
70h
Fail
t
PROG
I/Ox
Col. Add.1,2 & Row Add.1,2,3
"0"
"1"
Col. Add.1,2
相關(guān)PDF資料
PDF描述
K9WAG08U1M 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9S2808V0B TV 29C 29#16 PIN RECP
K9S6408V0B SmartMedia CARD
K9S6408V0C SmartMedia CARD
K9S3208V0A 4M x 8 bit SmartMedia Card
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K8G08U0M-PCB0000 制造商:Samsung Semiconductor 功能描述:
K9K8G08U1A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9K8G08U1A-I 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9K8G08U1M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9K8G08UOA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*