參數(shù)資料
型號(hào): HB52RD168DB
廠商: Hitachi,Ltd.
英文描述: 128 MB Unbuffered SDRAM S.O.DIMM(128MB 未緩沖同步DRAM DIMM)
中文描述: 128 MB的無(wú)緩沖內(nèi)存的SODIMM(128MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 44/67頁(yè)
文件大?。?/td> 623K
代理商: HB52RD168DB
HB52RD168DB-D
44
Read with auto precharge to Read command interval
1. Different bank:
When some banks are in the active state, the second read command (another bank) is
executed. Even when the first read with auto-precharge is a burst read that is not yet finished, the data read
by the second command is valid. The internal auto-precharge of one bank starts at the next clock of the
second command.
Read with Auto Precharge to Read Command Interval
(Different bank)
CK
Command
BA
Dout
READ A
READ
out A0
out A1
out B0
out B1
CE
Latency = 3
Burst Length = 4
bank0
Read A
bank3
Read
Note: Internal auto-precharge starts at the timing indicated by " ".
2. Same bank:
The consecutive read command (the same bank) is illegal.
Write with auto precharge to Write command interval
1. Different bank:
When some banks are in the active state, the second write command (another bank) is
executed. In the case of burst writes, the second write command has priority. The internal auto-precharge
of one bank starts at the next clock of the second command .
Write with Auto Precharge to Write Command Interval
(Different bank)
CK
Command
BA
Din
WRIT A
WRIT
in B1
in B2
in B3
in A0
in A1
in B0
Burst Length = 4
bank0
Write A
bank3
Write
Note: Internal auto-precharge starts at the timing indicated by " ".
2. Same bank:
The consecutive write command (the same bank) is illegal.
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