參數(shù)資料
型號(hào): HB52RD168DB
廠商: Hitachi,Ltd.
英文描述: 128 MB Unbuffered SDRAM S.O.DIMM(128MB 未緩沖同步DRAM DIMM)
中文描述: 128 MB的無緩沖內(nèi)存的SODIMM(128MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 35/67頁
文件大?。?/td> 623K
代理商: HB52RD168DB
HB52RD168DB-D
35
Burst Length
READ
CK
Command
Dout
ACTV
Row
Column
out 0
out 6
out 7
out 8
Address
out 0 out 1
out 4
out 5
out 0
out 1 out 2 out 3
BL = 1
out 0 out 1 out 2
out 3
out 0
out 1 out 2 out 3
out 6
out 7
out 4
out 5
out 0-1
out 0
out 1
BL = 2
BL = 4
BL = 8
BL = full page
t
RCD
BL : Burst Length
CE
Latency = 2
Write operation:
Burst write or single write mode is selected by the OPCODE (A13, A12, A11, A10, A9,
A8) of the mode register.
1. Burst write:
A burst write operation is enabled by setting OPCODE (A9, A8) to (0, 0). A burst write
starts in the same clock as a write command set. (The latency of data input is 0 clock.) The burst length
can be set to 1, 2, 4, 8, and full-page, like burst read operations. The write start address is specified by the
column address and the bank select address (BA) at the write command set cycle.
WRIT
CK
Command
Din
ACTV
Row
Column
in 0
in 6
in 7
in 8
Address
in 1
in 4
in 5
in 3
BL = 1
in 6
in 7
in 4
in 5
in 0-1
in 0
in 1
BL = 2
BL = 4
BL = 8
BL = full page
t
RCD
in 0
in 0
in 0
in 0
in 1
in 1
in 1
in 2
in 2
in 2
in 3
in 3
CE
Latency = 2, 3
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