參數(shù)資料
型號(hào): HB52RD168DB
廠商: Hitachi,Ltd.
英文描述: 128 MB Unbuffered SDRAM S.O.DIMM(128MB 未緩沖同步DRAM DIMM)
中文描述: 128 MB的無(wú)緩沖內(nèi)存的SODIMM(128MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 24/67頁(yè)
文件大?。?/td> 623K
代理商: HB52RD168DB
HB52RD168DB-D
24
DQMB Truth Table
CKE
Command
Symbol
n - 1
n
DQMB
Write enable/output enable
ENB
H
×
×
L
Write inhibit/output disable
Note:
H: V
IH
. L: V
IL
.
×
: V
IH
or V
IL
.
Write: I
DID
is needed.
Read: I
DOD
is needed.
MASK
H
H
The SDRAM module can mask input/output data by means of DQMB.
During reading, the output buffer is set to Low-Z by setting DQMB to Low, enabling data output. On the
other hand, when DQMB is set to High, the output buffer becomes High-Z, disabling data output.
During writing, data is written by setting DQMB to Low. When DQMB is set to High, the previous data is
held (the new data is not written). Desired data can be masked during burst read or burst write by setting
DQMB. For details, refer to the DQMB control section of the SDRAM module operating instructions.
CKE Truth Table
CKE
Current state
Command
n - 1
n
S
RE
CE
W
Address
Active
Clock suspend mode entry
H
L
H
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
Any
Clock suspend
L
L
×
×
Clock suspend
Clock suspend mode exit
L
H
Idle
Auto-refresh command (REF)
H
H
L
L
L
H
Idle
Self-refresh entry (SELF)
H
L
L
L
L
H
Idle
Power down entry
H
L
L
H
H
H
H
L
H
×
×
×
Self refresh
Self refresh exit (SELFX)
L
H
L
H
H
H
L
H
H
×
×
×
Power down
Power down exit
L
H
L
H
H
H
L
H
H
×
×
×
Note:
H: V
IH
. L: V
IL
.
×
: V
IH
or V
IL
.
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