參數(shù)資料
型號： CYP15G0403DXB
英文描述： Physical Layer Devices
中文描述： 物理層設(shè)備
文件頁數(shù)： 35/78頁
文件大小： 1555K
代理商： CYP15G0403DXB
CYP15G04K100V1-MGC
CYP15G04K200V2-MGC
PRELIMINARY
Document #: 38-02044 Rev **
Page 35 of 78
Electrical Characteristics
Over the Operating Range
DC Characteristics
Parameter
V
DRINT
Description
Data Retention V
CC
Voltage
(config data may be lost below this)
Data Retention V
CCIO
Voltage
(config data may be lost below this)
Input Leakage Current
Output Leakage Current
Output Short Circuit Current
Test Conditions
V
CCIO
= 3.3V V
CCIO
= 2.5V V
CCIO
= 1.8V
Min. Max.
Min.
1.5
1.5
Unit
V
Max.
Min.
1.5
Max.
V
DRIO
1.2
1.2
1.2
V
I
IX
I
OZ
I
OS[9]
GND
≤
V
I
≤
3.6V
GND
≤
V
O
≤
V
CCIO
V
CCIO
= Max.,
V
OUT
= 0.5V
V
CC
= Min., V
PIN
= V
IL
–
10
–
10
10
10
–
160
–
10
–
10
10
10
–
10
–
10
10
10
μ
A
μ
A
mA
–
160
–
160
I
BHL
Input Bus Hold LOW Sustaining
Current
Input Bus Hold HIGH Sustaining
Current
Input Bus Hold LOW Overdrive
Current
Input Bus Hold HIGH Overdrive
Current
+40
+30
+25
μ
A
I
BHH
V
CC
= Min., V
PIN
= V
IH
–
40
–
30
–
25
μ
A
I
BHLO
V
CC
= Max.
+250
+200
+150
μ
A
I
BHHO
V
CC
= Max.
–
250
–
200
–
150
μ
A
Capacitance
[10]
Parameter
C
I/O
C
PCI
C
CLK
C
INPECL
C
SD1
C
INTTL
Description
Test Conditions
Min.
Max.
12
8
12
4
5
7
Unit
pF
pF
pF
pF
pF
pF
Input/Output Capacitance
PCI compliant I/O Capacitance
Clock Signal Capacitance
PECL Input Capacitance
SD Pin Input Capacitance
TTL Input Capacitance
V
in
= V
CCIO
@ f = 1 MHz 25
°
C
V
in
= V
CCIO
@ f = 1 MHz 25
°
C
V
in
= V
CCIO
@ f = 1 MHz 25
°
C
V
CC
= 3.3V @ f = 1 MHz 25
°
C
V
CC
= 3.3V @ f = 1 MHz 25
°
C
V
CC
= 3.3V @ f = 1 MHz 25
°
C
5
DC Specifications - Power
Parameter
I
CC2[11]
Device
P15G04K100 Active Power Supply Current
P15G04K200 Active Power Supply Current
P15G08K200 Active Power Supply Current
Description
Test Conditions
Frequency = Max Commercial
Frequency = Max Commercial
Frequency = Max Commercial
Standby
11
11
11
Typical
1800
2000
3000
Unit
mA
mA
mA
Notes:
9.
Not more than one output should be tested at a time. Duration of the short circuit should not exceed 1 second. V
=0.5V has been chosen to avoid test
problems caused by tester ground degradation. Tested initially and after any design or process changes that may affect these parameters.
10. Tested initially and after any design or process changes that may affect these parameters, but not 100% tested.
11.
Typical I
CC
is measured with V
CC
= 3.3V, T
A
= 25
°
C, RFEN = LOW, and outputs unloaded.
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