參數(shù)資料
型號(hào)： COP8SDR9
廠商： National Semiconductor Corporation
英文描述： 8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout(8位基于CMOS 閃速存儲(chǔ)器的帶32K存儲(chǔ)器，虛擬EEPROM和電壓過低復(fù)位的微控制器)
中文描述： 8位CMOS閃存為基礎(chǔ)的32K的內(nèi)存，虛擬EEPROM和欠壓（8位基于的CMOS閃速存儲(chǔ)器的帶32K的存儲(chǔ)器，微控制器虛擬的EEPROM和電壓過低復(fù)位的微控制器）
文件頁數(shù)： 8/68頁
文件大?。?/td> 714K
代理商： COP8SDR9
2.0 Electrical Characteristics
(Continued)
TABLE 1. DC Electrical Characteristics (40C
≤
T
A
≤
+85C)
(Continued)
Parameter
Conditions
Min
Typ
Max
Units
Output Current Levels
D Outputs
Source
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 2.7V, V
OH
= 1.8V
V
CC
= 4.5V, V
OL
= 1.0V
V
CC
= 2.7V, V
OL
= 0.4V
7
4
10
3.5
mA
mA
mA
mA
Sink (Note 10)
All Others
Source (Weak Pull-Up Mode)
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 2.7V, V
OH
= 1.8V
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 2.7V, V
OH
= 1.8V
V
CC
= 4.5V, V
OL
= 1.0V
V
CC
= 2.7V, V
OL
= 0.4V
V
CC
= 5.5V
10
5
7
4
10
3.5
1
μA
μA
mA
mA
mA
mA
μA
mA
mA
V
pF
pF
Source (Push-Pull Mode)
Sink (Push-Pull Mode) (Note 10)
TRI-STATE Leakage
Allowable Sink Current per Pin (Note 7)
Maximum Input Current without Latchup (Note 5)
RAM Retention Voltage, V
R
(in HALT Mode)
Input Capacitance
Load Capacitance on D2
Voltage on G6 to Force Execution from Boot
ROM
Input Current on G6 when Input
>
V
CC
(Note 7)
Flash Memory Data Retention (Note 7)
Flash Memory Number of Erase/Write Cycles
(Note 7)
+1
15
±
200
2.0
(Note 7)
(Note 7)
G6
7
1000
2 x V
CC
V
CC
+ 7
V
V
IN
= 11V, V
CC
= 5.5V
25C
See Table 14 Typical Flash
Memory Endurance
500
100
μA
yrs
10
5
cycles
TABLE 2. AC Electrical Characteristics (40C
≤
T
A
≤
+85C)
Parameter
Conditions
Min
Typ
Max
Units
Instruction Cycle Time (t
C
)
Crystal/Resonator
4.5V
≤
V
CC
≤
5.5V
2.7V
≤
V
CC
<
4.5V
R
L
= 2.2k, C
L
= 100 pF
4.5V
≤
V
CC
≤
5.5V
2.7V
≤
V
CC
<
4.5V
See Table 14 Typical
Flash Memory
Endurance
0.5
1.5
DC
DC
μs
μs
Output Propagation Delay (Note 6)
SO, SK
0.35
0.8
μs
μs
Flash Memory Page Erase Time
1
ms
Flash Memory Mass Erase Time
Frequency of MICROWIRE/PLUS in
Slave Mode
MICROWIRE/PLUS Setup Time (t
UWS
)
(Note 6)
MICROWIRE/PLUS Hold Time (t
UWH
)
(Note 6)
MICROWIRE/PLUS Output
Propagation Delay (t
UPD
)
Input Pulse Width (Note 7)
Interrupt Input High Time
Interrupt Input Low Time
8
ms
2
MHz
20
ns
20
ns
150
ns
1
1
t
C
t
C
C
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COP8SDR9HLQ7 制造商:NSC 制造商全稱:National Semiconductor 功能描述:8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout
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COP8SDR9HVA7 制造商:NSC 制造商全稱:National Semiconductor 功能描述:8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout
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