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參數(shù)資料
| 型號(hào)： | COP8SDR9 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | 8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout(8位基于CMOS 閃速存儲(chǔ)器的帶32K存儲(chǔ)器，虛擬EEPROM和電壓過低復(fù)位的微控制器) |
| 中文描述： | 8位CMOS閃存為基礎(chǔ)的32K的內(nèi)存，虛擬EEPROM和欠壓（8位基于的CMOS閃速存儲(chǔ)器的帶32K的存儲(chǔ)器，微控制器虛擬的EEPROM和電壓過低復(fù)位的微控制器） |
| 文件頁數(shù)： | 7/68頁 |
| 文件大?。?/td> | 714K |
| 代理商： | COP8SDR9 |
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Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC
)
Voltage at Any Pin
Total Current into V
CC
Pin (Source)
7V
0.3V to V
CC
+0.3V
200 mA
Total Current out of GND Pin (Sink)
Storage Temperature Range
ESD Protection Level
200 mA
65C to +140C
2 kV (Human Body
Model)
Note 1:
Absolute maximum ratings indicate limits beyond which damage to
the device may occur. DC and AC electrical specifications are not ensured
when operating the device at absolute maximum ratings.
2.0 Electrical Characteristics
TABLE 1. DC Electrical Characteristics (40C
≤
T
A
≤
+85C)
Parameter
Conditions
Min
2.7
10
Typ
Max
5.5
50 x 10
6
0.1 V
CC
Units
V
ns
V
Operating Voltage
Power Supply Rise Time
Power Supply Ripple (Note 2)
Supply Current (Note 3)
High Speed Mode
CKI = 10 MHz
CKI = 3.33 MHz
Dual Clock Mode
CKI = 10 MHz, Low Speed OSC = 32 kHz
CKI = 3.33 MHz, Low Speed OSC = 32 kHz
Low Speed Mode
Low Speed OSC = 32 kHz
HALT Current with BOR Disabled (Note 4)
High Speed Mode
Dual Clock Mode
Peak-to-Peak
V
CC
= 5.5V, t
C
= 0.5 μs
V
CC
= 4.5V, t
C
= 1.5 μs
14.7
7
mA
mA
V
CC
= 5.5V, t
C
= 0.5 μs
V
CC
= 4.5V, t
C
= 1.5 μs
14.7
7
mA
mA
V
CC
= 5.5V
60
103
μA
V
CC
= 5.5V, CKI = 0 MHz
V
CC
= 5.5V, CKI = 0 MHz, Low
Speed OSC = 32 kHz
V
CC
= 5.5V, CKI = 0 MHz, Low
Speed OSC = 32 kHz
<
2
10
μA
<
5
17
μA
Low Speed Mode
<
5
17
μA
Idle Current (Note 3)
High Speed Mode
CKI = 10 MHz
CKI = 3.33 MHz
Dual Clock Mode
CKI = 10 MHz, Low Speed OSC = 32 kHz
CKI = 3.33 MHz, Low Speed OSC = 32 kHz
Low Speed Mode
Low Speed OSC = 32 kHz
Supply Current for BOR Feature
High Brownout Trip Level (BOR Enabled)
Low Brownout Trip Level (BOR Enabled)
Input Levels (V
IH
, V
IL
)
Logic High
Logic Low
V
CC
= 5.5V, t
C
= 0.5 μs
V
CC
= 4.5V, t
C
= 1.5 μs
2.5
1.2
mA
mA
V
CC
= 5.5V, t
C
= 0.5 μs
V
CC
= 4.5V, t
C
= 1.5 μs
2.5
1.2
mA
mA
V
CC
= 5.5V
V
CC
= 5.5V
15
30
45
4.5
2.9
μA
μA
V
V
4.17
2.7
4.28
2.78
0.8 V
CC
V
0.16
V
CC
V
Internal Bias Resistor for the CKI
Crystal/Resonator Oscillator
Hi-Z Input Leakage
Input Pullup Current
Port Input Hysteresis
0.3
1.0
2.5
M
V
CC
= 5.5V
V
CC
= 5.5V, V
IN
= 0V
1
50
+1
210
μA
μA
V
0.25 V
CC
C
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|---|---|
| COP8SDR9HLQ7 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout |
| COP8SDR9HLQ8 | 功能描述:IC MCU FLASH 8BIT 32K EE 44LLP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:COP8™ 8S 標(biāo)準(zhǔn)包裝:250 系列:56F8xxx 核心處理器:56800E 芯體尺寸:16-位 速度:60MHz 連通性:CAN，SCI，SPI 外圍設(shè)備:POR，PWM，溫度傳感器，WDT 輸入/輸出數(shù):21 程序存儲(chǔ)器容量:40KB（20K x 16） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:6K x 16 電壓 - 電源 (Vcc/Vdd):2.25 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 6x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:48-LQFP 包裝:托盤 配用:MC56F8323EVME-ND - BOARD EVALUATION MC56F8323 |
| COP8SDR9HVA7 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout |
| COP8SDR9HVA8 | 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| COP8SDR9HVA8 63SN | 制造商:National Semiconductor 功能描述:MCU 8-bit COP8 CISC 32KB Flash 3.3V/5V 44-Pin PLCC Rail |
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