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參數(shù)資料
| 型號(hào)： | AM79C850KCW |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | SUPERNET-R 3 |
| 中文描述： | 1 CHANNEL(S), 100M bps, FDDI CONTROLLER, PQFP208 |
| 封裝： | PLASTIC, QFP-208 |
| 文件頁數(shù)： | 63/97頁 |
| 文件大?。?/td> | 358K |
| 代理商： | AM79C850KCW |
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P R E L I M I N A R Y
AMD
63
SUPERNET 3
BIST Pattern Requirements
This section presents the pattern requirements that the
BIST implementation should try to meet. The implemen-
tation should try to meet as many of the requirements as
possible, however, overhead considerations may make
this goal unattainable. In the case that the requirements
are not met, a means of applying these patterns
functionally must be found. The functional application of
patterns may dictate additional testability requirements
in the AF. The pattern requirements are divided into two
sections, the first deals with the testing of the portion of
the AF that is SRAM-like, the second deals with the
testing of the remaining AF logic such as the match
logic, priority encoder, exact logic, etc.
Pattern requirements for the SRAM-like portion of
the AF
The following pattern requirements are taken from a
paper by Jain and Stroud. Some of the requirements
may be architecture specific and may not be necessary.
Additional requirements may be necessary depending
on the architecture of the AF. This paper describes two
algorithms that may be used in the implementation of
the BIST test.
1. Each cell must undergo a 0_1 transition and then a
1_0 transition or vice versa. Each cell must be read
after each transition.
2. For every pair of physically adjacent cell i and j the
test writes cell i with and 1 and cell j with a 0 and then
cell i with a 0 and cell j with a 1. It then reads after
each write. To consider coupling faults between
master/slave bits, cells i and j are written with the
same data.
3. Each cell must be read twice after writing a 1 and a 0.
4. Decoder faults should be detected by writing unique
data in every memory word and then reading the AF.
5. A special sequence of data patterns should be
written and read to detect stuck-at faults in the read
column decoder logic.
6. Some memory words should be written and read
with data having different logic values on every pair
of adjacent input data lines.
Pattern requirements for the non-SRAM portion of
the AF
The following pattern requirements may be difficult to
implement in silicon and may have to be applied func-
tionally. Some of the patterns described in this section
can be applied at the same time as the SRAM tests are
being applied. The non-SRAM portion of the AF consists
of the comparator, the source address exact/inexact
match logic, the destination exact/inexact match logic,
and the multiple match logic (which includes the priority
encoder logic). The stuck-at fault model is the only fault
model used in developing the pattern requirements for
this portion of the AF. The other fault models discussed
earlier were developed for memory arrays and it would
not make sense to try to apply them to this section of
the AF.
Comparator
The output of the comparator logic is the 32 match lines
for each AF entry. The output of the comparator is
further modified by the state of the personality bits. The
comparator can be viewed as 32 48-bit wide com-
parators with one half of the inputs to each comparator
supplied by the corresponding mask and data bits for
each comparator, and the other half of the inputs to each
comparator supplied by the comparand register. For the
purpose of describing the data patterns necessary to
test each comparator it will be assumed that all valid bits
are set, all skip bits are reset and that either the SA or
DA bits are set to allow a match operation to be visible
outside the AF. The following table summarizes the truth
table for a single bit of the comparator:
Table 1. Truth Table for the Comparator
MASK
DATA
COMP
MATCH
0
X
X
YES
1
0
0
YES
1
0
1
NO
1
1
0
NO
1
1
1
YES
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