- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384065 > μPD45128441 (NEC Corp.) 128M-bit Synchronous DRAM(128M 同步DRAM) PDF資料下載
參數(shù)資料
| 型號(hào)： | μPD45128441 |
| 廠商： | NEC Corp. |
| 英文描述： | 128M-bit Synchronous DRAM(128M 同步DRAM) |
| 中文描述： | 128兆位同步DRAM（128M的同步DRAM）的 |
| 文件頁(yè)數(shù)： | 34/84頁(yè) |
| 文件大?。?/td> | 693K |
| 代理商： | ΜPD45128441 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)當(dāng)前第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)
Preliminary Data Sheet
34
μ
PD45128441, 45128841, 45128163
13. Electrical Specifications
All voltages are referenced to V
SS
(GND).
After power up, wait more than 100
μ
s and then, execute
Power on sequence and Auto Refresh
before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
V
CC
, V
CC
Q
0.5 to +4.6
V
Voltage on any pin relative to GND
V
T
0.5 to +4.6
V
Short circuit output current
I
O
50
mA
Power dissipation
P
D
1
W
Operating ambient temperature
T
A
0 to 70
°
C
Storage temperature
T
stg
55 to + 125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
, V
CC
Q
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+ 0.3
V
Low level input voltage
V
IL
0.3
+0.8
V
Operating ambient temperature
T
A
0
70
°
C
Pin Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I1
A0 - A13
2.5
4
pF
C
I2
CLK, CKE, /CS, /RAS, /CAS, /WE,
DQM, UDQM, LDQM
2.5
4
Data input / output capacitance
C
I/O
DQ0 - DQ15
4
6.5
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| μPD4516161A | 16M-bit Synchronous DRAM(16M 同步動(dòng)態(tài)RAM) |
| μPD4516421A | 16M-bit Synchronous DRAM(16M 同步動(dòng)態(tài)RAM) |
| μPD4516821A | 16M-bit Synchronous DRAM(16M 同步動(dòng)態(tài)RAM) |
| μPD45256163 | 256M-Bit Synchronous DRAM(256M 同步 動(dòng)態(tài)RAM) |
| μPD45256441 | 256M-Bit Synchronous DRAM(256M 同步 動(dòng)態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PD45128441G5 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
| PD45128441G5-A10I-9JF | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
| PD45128441G5-A10LI-9JF | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
| PD45128441G5-A10LT-9JF | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
| PD45128441G5-A10T-9JF | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。