參數(shù)資料
型號: μPD45128441
廠商: NEC Corp.
英文描述: 128M-bit Synchronous DRAM(128M 同步DRAM)
中文描述: 128兆位同步DRAM(128M的同步DRAM)的
文件頁數(shù): 11/84頁
文件大小: 693K
代理商: ΜPD45128441
Preliminary Data Sheet
11
μ
PD45128441, 45128841, 45128163
Fig.1
Mode register set command
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
A12, A13
Fig.2 Row address strobe and
bank activate command
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
A12, A13
(Bank select)
Row
Row
Fig.3
Precharge command
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
A12, A13
(Bank select)
(Precharge select)
2. Commands
Mode register set command
(/CS, /RAS, /CAS, /WE = Low)
The
μ
PD45128xxx has a mode register that defines how the device
operates. In this command, A0 through A13 are the data input pins.
After power on, the mode register set command must be executed to
initialize the device.
The mode register can be set only when all banks are in idle state.
During 2 CLK (t
RSC
) following this command, the
μ
PD45128xxx cannot
accept any other commands.
Activate command
(/CS, /RAS = Low, /CAS, /WE = High)
The
μ
PD45128xxx has four banks, each with 4,096 rows.
This command activates the bank selected by A12 and A13 (BS) and a
row address selected by A0 through A11.
This command corresponds to a conventional DRAM’s /RAS falling.
Precharge command
(/CS, /RAS, /WE = Low, /CAS = High)
This command begins precharge operation of the bank selected by
A12 and A13 (BS). When A10 is High, all banks are precharged,
regardless of A12 and A13. When A10 is Low, only the bank selected
by A12 and A13 is precharged.
After this command, the
μ
PD45128xxx can’t accept the activate
command to the precharging bank during t
RP
(precharge to activate
command period).
This command corresponds to a conventional DRAM’s /RAS rising.
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