參數(shù)資料
型號: W9412G6CH-5
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 8M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: 0.400 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
文件頁數(shù): 28/55頁
文件大小: 2011K
代理商: W9412G6CH-5
W9412G6CH
Publication Release Date:Nov. 19, 2007
- 34 -
Revision A07
10.8 Table 8: Overshoot/Undershoot Specification for Data, Strobe, and Mask Pins
SPECIFICATION
PARAMETER
DDR400
DDR333
DDR266
Maximum peak amplitude allowed for overshoot
1.2 V
Maximum peak amplitude allowed for undershoot
1.2 V
The area between the overshoot signal and VDD
must be less than or equal to Max. area in Figure 4
1.44 V-nS
2.25 V-nS
2.4 V-nS
The area between the undershoot signal and GND
must be less than or equal to Max. area in Figure 4
1.44 V-nS
2.25 V-nS
2.4 V-nS
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
-5
-4
-3
-2
-1
0
1
2
3
4
5
Max. amplitude = 1.2V
Overshoot
VDD
Max. area
Max. amplitude = 1.2V
GND
Undershoot
Time (nS)
Figure 4: DQ/DM/DQS AC Overshoot and Undershoot Definition
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