- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄245650 > W25Q64CVSSAG (WINBOND ELECTRONICS CORP) 64M X 1 SPI BUS SERIAL EEPROM, PDSO8 PDF資料下載
參數(shù)資料
| 型號(hào)： | W25Q64CVSSAG |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 64M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.208 INCH, GREEN, SOIC-8 |
| 文件頁(yè)數(shù)： | 11/79頁(yè) |
| 文件大?。?/td> | 1086K |
| 代理商： | W25Q64CVSSAG |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)當(dāng)前第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)
W25Q64CV
Publication Release Date: April 01, 2011
- 19 -
Revision C
7.2 INSTRUCTIONS
The instruction set of the W25Q64CV consists of thirty five basic instructions that are fully controlled
through the SPI bus (see Instruction Set table1-3). Instructions are initiated with the falling edge of Chip
Select (/CS). The first byte of data clocked into the DI input provides the instruction code. Data on the DI
input is sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address bytes, data
bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed with the
rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in figures 4
through 37. All read instructions can be completed after any clocked bit. However, all instructions that
Write, Program or Erase must complete on a byte boundary (/CS driven high after a full 8-bits have been
clocked) otherwise the instruction will be ignored. This feature further protects the device from inadvertent
writes. Additionally, while the memory is being programmed or erased, or when the Status Register is
being written, all instructions except for Read Status Register will be ignored until the program or erase
cycle has completed.
7.2.1
Manufacturer and Device Identification
MANUFACTURER ID
(MF7-MF0)
Winbond Serial Flash
EFh
Device ID
(ID7-ID0)
(ID15-ID0)
Instruction
ABh, 90h
9Fh
16h
4017h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WS32K32-100HC | 128K X 8 MULTI DEVICE SRAM MODULE, 100 ns, CHIP66 |
| WS128K32-25G4CE | 512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68 |
| WMS128K8L-35DEQE | 128K X 8 STANDARD SRAM, 35 ns, CDSO32 |
| WMF512K8X-120CLQ5 | 512K X 8 FLASH 5V PROM, 120 ns, CQCC32 |
| WF4M16-150DTI5 | 4M X 16 FLASH 5V PROM MODULE, 150 ns, CDSO56 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25Q64CVSSAP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q64CVSSIG | 功能描述:IC SPI FLASH 64MBIT 8-SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| W25Q64CVSSIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q64CVTCAG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q64CVTCAP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。