
CHAPTER 17 ELECTRICAL SPECIFICATIONS
User’s Manual U12768EJ4V1UD
458
Flash Memory Programming Mode
(
PD70F3015B, 70F3015BY, 70F3017A, 70F3017AY only)
Write/erase characteristics (TA = 0 to 85
°C, VDD = AVDD = BVDD = 3.0 to 3.6 V, VSS = AVSS = BVSS = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
VPP supply voltage
VPP2
During flash memory
programming
7.5
7.8
8.1
V
VDD supply current
IDD
When VPP = VPP2, fXX = 20
MHz
67
mA
VPP supply current
IPP
VPP = VPP2, 0.1 s after erasure
100
mA
Step erase time
tER
Note 1
0.2
s
Overall erase time per area
Note 2
tERA
When step erase time = 0.2 s,
Note 3
20
s/area
Write-back time
tWB
Note 4
1
ms
Number of write-backs per
write-back command
CWB
When write-back time = 1 ms,
Note 5
300
Count/write-
back
command
Number of erase/write-backs
CERWB
16
Count
Step writing time
tWR
Note 6
20
s
Overall writing time per word
tWRW
When step writing time = 20
s (1 word = 4 bytes),
Note 7
20
200
s/word
100
Count/area
Number of rewrites per
area
Note 2
CERWR
1 erase + 1 write after erase = 1
rewrite, Notes 8, 9
20
Count/area
Notes 1. The recommended setting value of the step erase time is 0.2 s.
2. No areas are included in the
PD70F3015B and 70F3015BY.
The areas the
PD70F3017A and 70F3017AY are as follows.
Area 0 = 000000H to 01FFFFH
Area 1 = 020000H to 03FFFFH
3. The prewrite time prior to erasure and the erase verify time (write-back time) are not included.
4. The recommended setting value of the write-back time is 1 ms.
5. Write-back is executed once by the issuance of the write-back command. Therefore, the retry count
must be the maximum value minus the number of commands issued.
6. The recommended setting value of the step writing time is 20
s.
7. 20
s is added to the actual writing time per word. The internal verify time during and after the writing is
not included.
8. When writing initially to shipped products, it is counted as one rewrite for both “erase to write” and “write
only”.
Example (P: Write, E: Erase)
Shipped product
→ P → E → P → E → P: 3 rewrites
Shipped product
→ E → P → E → P → E → P: 3 rewrites