參數(shù)資料
型號: S71PL191HB0BFI100
廠商: SPANSION LLC
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA73
封裝: 9 X 13 MM, LEAD FREE, FBGA-73
文件頁數(shù): 13/172頁
文件大?。?/td> 4662K
代理商: S71PL191HB0BFI100
May 7, 2004 S71PL191_193Hx0_00A2
13
Ad va nc e
Inform ati o n
Pin Description
A20–A0
=
21 Address Inputs (Common)
A21
=
Address Input (Flash)
A22
=
Address Input (S29PL127H only) (Flash)
DQ15–DQ0
=
16 Data Inputs/Outputs (Common)
CE#f1
=
Chip Enable 1 (Flash) (S29PL127H only)
CE#f1, CE#f2
=
Chip Enable Inputs. CE#f1 controls the 64 Mb in
Banks 1A and 1B. CE#f2 controls the 64 Mb in Banks
2A and 2B (S29PL129H only).
CE#f3
=
Chip Enable input (S29JL064H)
CE#1ps
=
Chip Enable 1 (pSRAM)
CE2ps
=
Chip Enable 2 (pSRAM)
OE#
=
Output Enable (Common)
WE#
=
Write Enable (Common)
RY/BY#
=
Ready/Busy Output and open drain. When RY/BY#
= VIH, the device is ready to accept read operations
and commands. When RY/BY# = VOL, the device is
either executing an embedded algorithm or the
device is executing a hardware reset operation.
UB#s
=
Upper Byte Control (pSRAM)
LB#s
=
Lower Byte Control (pSRAM)
RESET#
=
Hardware Reset Pin, Active Low
WP#/ACC
=
Write Protect/Acceleration Input. When WP/ACC#=
VIL, the highest and lowest two 4K-word sectors are
write protected regardless of other sector protection
configurations. When WP/ACC#= VIH, these sector
are unprotected unless the DYB or PPB is
programmed. When WP/ACC#= 12V, program and
erase operations are accelerated.
VCCf
=
Flash 3.0 volt-only single power supply (see Product
Selector Guide for speed options and voltage supply
tolerances)
VCCs
=
pSRAM Power Supply
VSS
=
Device Ground (Common)
NC
=
Pin Not Connected Internally
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