參數(shù)資料
型號： S71PL191HB0BFI100
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA73
封裝： 9 X 13 MM, LEAD FREE, FBGA-73
文件頁數(shù)： 128/172頁
文件大小： 4662K
代理商： S71PL191HB0BFI100
May 7, 2004 S29PL127H_129H_00A1
S29PL127H/S29PL129H
43
Pre l i m i n a r y
Table 13. System Interface String
Table 14. Device Geometry Definition
Addresses
Data
Description
1Bh
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0004h
Typical timeout per single byte/word write 2N s
20h
0000h
Typical timeout for Min. size buffer write 2N
s (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0005h
Max. timeout for byte/word write 2Ntimes typical
24h
0000h
Max. timeout for buffer write 2Ntimes typical
25h
0004h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Addresses
Data
Description
27h
0018h
Device Size = 2N byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
00FDh
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
相關PDF資料
PDF描述
S71VS128RC0ZHK203 SPECIALTY MEMORY CIRCUIT, PBGA56
S71VS128RC0ZHK2L2 SPECIALTY MEMORY CIRCUIT, PBGA56
S71WS512ND0BAWEH SPECIALTY MEMORY CIRCUIT, PBGA84
S72NS512PE0AHGL02 SPECIALTY MEMORY CIRCUIT, PBGA133
S7911 PIN PHOTO DIODE
相關代理商/技術參數(shù)
參數(shù)描述
S71PL254 制造商:SPANSION 制造商全稱:SPANSION 功能描述:STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
S71PL254J 制造商:SPANSION 制造商全稱:SPANSION 功能描述:STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
S71PL254J04BAW0Z0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs
S71PL254J04BAW0Z2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs
S71PL254J04BAW0Z3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*