參數(shù)資料
型號(hào): NANDBAR4N1BZBC5F
廠商: NUMONYX
元件分類: 存儲(chǔ)器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA137
封裝: 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-137
文件頁數(shù): 49/52頁
文件大?。?/td> 1126K
代理商: NANDBAR4N1BZBC5F
Description
NANDxxxxNx
1
Description
The NANDxxxxNx devices combine multiple memory devices in a multichip package or a
package-on-package solution that includes:
l
1.8/2.6 V supply 1- or 2-Gbit (x8/x16) or 4-Gbit (x16), or 1.8 V supply 2 x 2-Gbit (×16),
NAND flash memories
(NAND01GWxB2B, NAND01GRxB2B, NAND01GRxB2C, NAND02GRxB2C,
NAND02GRxB2D, NAND04GxxB2D)
l
128-Mbit (x16) SDR (single data rate) LPSDRAM (M65KA128AJ) + 256-Mbit (x16)
SDR LPSDRAM (M65KA256AJ), or
l
128-Mbit (x16) SDR LPSDRAM (M65KA128AJ) + 512-Mbit (x16) SDR LPSDRAM
(M65KA512AC), or
l
256-Mbit (x16) SDR LPSDRAM (M65KA256AG), or
l
512-Mbit (x16) SDR LPSDRAM (M65KA512AB, or M65KA512AC, or M65KA512AH, or
M65KA512AM), or
l
2 x 512-Mbit (x16) SDR LPSDRAMs (M65KA512AB, or M65KA512AM, or
M65KA512AC, or M65KA512AJ), or
l
512-Mbit (x32) SDR LPSDRAM (M65KC512AB or M65KC512AC), or
l
1-Gbit (x32) SDR LPSDRAM (M65KC001AJ), or
l
512-Mbit (x16) DDR (double data rate) LPSDRAM (M65KG512AB, or M65KG512AH,
or M65KG512AM, or M65KG512AC), or
l
512-Mbit (x32) DDR LPSDRAM (M65KD512AC), or
l
1-Gbit (x16) DDR LPSDRAM (M65KG001AJ), or
l
1-Gbit (x32) DDR LPSDRAM (M65KD001AJ)
l
2 x 1-Gbit (x32) DDR LPSDRAM (M65KD001AJ).
The NAND flash memory and LPSDRAM components have separate power supplies. They
also have separate control, address and input/output signals, which allows simultaneous
access to both devices at any moment. They may or not share the same grounds,
depending on the package in which they are offered.
They are distinguished by a Chip Enable input, EF, for the NAND flash memory and a Chip
Select, ED, for the LPSDRAM. See Figure 1: Block diagram for TFBGA107, TFBGA137,
overview of the signals associated with each component.
This datasheet should be read in conjunction with the SLC large page NAND flash
datasheets (NAND01G-B2B_NAND02G-B2C, NAND01G-B2C, NAND02G-B2D, and
NAND04G-B2D_NAND08G-BxC) and LPSDRAM datasheets (M65KA256AG,
M65KA512AB, M65KA512AC, M65KG512AB, M65KC512AB, M65KC512AC,
M65KD512AC, M65KAxxxAJ, M65KA512AH, M65KG512AH, M65KGxxxAJ, M65KAxxxAM,
M65KCxxxAJ, M65KDxxxAJ, M65KGxxxAM, and M65KG512AC).
相關(guān)PDF資料
PDF描述
NANDB9R4N2CZBA5E SPECIALTY MEMORY CIRCUIT, PBGA149
NB06QSA035 6 A, 35 V, SILICON, RECTIFIER DIODE
NB100LVEP224FAR2G 100LVE SERIES, LOW SKEW CLOCK DRIVER, 24 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PQFP64
NB14R1521 1 ELEMENT, 1521 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
F14K69.5 1 ELEMENT, 69.5 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NANDBAR4N2AZBA5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
NANDBAR4N4AZBB5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
NANDBAR4N5BZBC5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
NANDBBR4E5AP4R5E 制造商:Micron Technology Inc 功能描述:64MX16/128MX16 MCP PLASTIC PBF VFBGA 1.8V COMBO - Trays
NANDBBR4E5AP4R5F 制造商:Micron Technology Inc 功能描述:128MX16/32MX32/32MX32 MCP PLASTIC PBF VFBGA 1.8V COMBO - Tape and Reel