參數(shù)資料
型號: NANDBAR4N1BZBC5F
廠商: NUMONYX
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA137
封裝: 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-137
文件頁數(shù): 13/52頁
文件大?。?/td> 1126K
代理商: NANDBAR4N1BZBC5F
Description
NANDxxxxNx
Figure 9.
TFBGA149 connections (top view through package)
1.
Balls shaded in gray are only used for NAND and DDR devices.
2.
All voltage balls must be connected to the power supply (the internal connection is not guaranteed). All ground balls must
be connected to the ground.
3.
For NANDBAR4N0 and NANDBAR4N2, the ball E9 is the address A13.
AI13231b
DQM1
KE
A11
DQM0
H
A9
D
R
C
DQ4
A1
B
A3
A
8
7
6
5
4
3
2
1
G
F
E
DU
WP
A0
BA0
DQ6
CAS
WF
BA1
DU
VDDD
9
NC
A7
ED
M
L
K
J
DU
DQ15
NC
DQ13
VSSF
I/O0
I/O7
DU
VSSQD
DU
P
N
12
NC
RB
DQ2
NC
NC(3)
EF
I/O2
NC
CL
AL
DQ0
VSSD
I/O1
K
DQ1
DQ3
DQ5
DQ7
VDDD
DQ10
VSSQD
DQ8
DU
WD
NC
RAS
VDDF
NC
A10
DU
A8
DU
NC
DU
NC
VDDQD
NC
DU
10
11
T
R
NC
DU
VSSD
VDDD
DU
NC
I/O6
I/O5
A6
A12
NC
A2
A5
I/O4
NC
A4
NC
VDDF
VSSF
NC
I/O3
NC
DQ11
DQ14
DQ12
DQ9
VDDQD
VSSQD
I/O9
I/O8
I/O15
I/O14
I/O13
I/O10
I/O12
I/O11
LDQS
UDQS
K
相關(guān)PDF資料
PDF描述
NANDB9R4N2CZBA5E SPECIALTY MEMORY CIRCUIT, PBGA149
NB06QSA035 6 A, 35 V, SILICON, RECTIFIER DIODE
NB100LVEP224FAR2G 100LVE SERIES, LOW SKEW CLOCK DRIVER, 24 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PQFP64
NB14R1521 1 ELEMENT, 1521 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
F14K69.5 1 ELEMENT, 69.5 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NANDBAR4N2AZBA5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
NANDBAR4N4AZBB5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
NANDBAR4N5BZBC5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
NANDBBR4E5AP4R5E 制造商:Micron Technology Inc 功能描述:64MX16/128MX16 MCP PLASTIC PBF VFBGA 1.8V COMBO - Trays
NANDBBR4E5AP4R5F 制造商:Micron Technology Inc 功能描述:128MX16/32MX32/32MX32 MCP PLASTIC PBF VFBGA 1.8V COMBO - Tape and Reel