參數(shù)資料
型號: MT28F160S3
廠商: Micron Technology, Inc.
英文描述: 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲器)
中文描述: 2梅格× 8 /檢測起× 16智能3閃光(2 M中的x 8月1日M中的x 16閃速存儲器)
文件頁數(shù): 8/39頁
文件大?。?/td> 281K
代理商: MT28F160S3
8
2 Meg x 8 /1 Meg x 16 Even-Sectored Flash Memory
MT28F160S3_2 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2 MEG x 8/1 MEG x 16
SMART 3 EVEN-SECTORED FLASH
PRELIMINARY
READ ARRAY COMMAND
Upon initial device power-up and exiting the deep
power-down mode, the default state is the read array
mode. This mode is also initiated by writing the READ
ARRAY command to the device. The device remains
available for READs until another command is written.
Once the ISM has started block erase, program, or lock
bit configuration, the device will not recognize the
READ ARRAY command until the ISM completes its
operation, unless the ISM is suspended via an ERASE
SUSPEND or PROGRAM SUSPEND command. The
READ ARRAY command functions independently of
the V
PP
voltage.
READ QUERY MODE COMMAND
This section is related to the definition of the data
structure returned by the CFI QUERY command. Sys-
tem software can access this structure to gain critical
information such as block size, density, x8/x16 configu-
ration, and electrical specifications. Once this informa-
tion has been obtained, the software will know which
command sets can be used to enable flash writes, block
erases, and otherwise control the flash component. The
query belongs to an overall specification for multiple
command set and control interface descriptions called
common flash interface (CFI).
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