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參數(shù)資料
| 型號： | MT28F160S3 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲器) |
| 中文描述： | 2梅格× 8 /檢測起× 16智能3閃光（2 M中的x 8月1日M中的x 16閃速存儲器） |
| 文件頁數(shù)： | 22/39頁 |
| 文件大小： | 281K |
| 代理商： | MT28F160S3 |
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22
2 Meg x 8 /1 Meg x 16 Even-Sectored Flash Memory
MT28F160S3_2 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2 MEG x 8/1 MEG x 16
SMART 3 EVEN-SECTORED FLASH
PRELIMINARY
Figure 4
SINGLE BY TE/WORD PROGRAM
Flowchart
Write 40h
Address
Start
Read Status Register
Write Data and
Address
SR7=
Suspend
Byte/Word
Program
Full Status Check
If Desired
SR4=
BYTE/WORD PROGRAM
Successful
YES
SR1=
SR3=
Read Status Register Data
(see above)
Voltage Range Error
Device Protect Error
Programming Error
0
0
0
1
1
1
NO
0
Byte/Word Program
Complete
FULL STATUS CHECK PROCEDURE
1
Suspend Byte/
Word Program
Loop
BUS
OPERATION COMMAND
WRITE
COMMENTS
SETUP BYTE/ Data = 40h
WORD
PROGRAM
BYTE/WORD Data = Data to Be
PROGRAM
Addr = Location to Be
Addr = Location to Be
Programmed
WRITE
Programmed
Programmed
READ
STANDBY
Status Register Data
Check SR7
1 = ISM Ready
0 = ISM Busy
Repeat for subsequent programming operations.
SR full status check can be done after each
PROGRAM operation or after a sequence of
programming operations.
Write FFh after the last program operation to
place device in read.
BUS
OPERATION COMMAND COMMENTS
STANDBY
Check SR3
1 = Programming Voltage
Error Detect
Check SR1
1 = Device Protect Detect
RP# = V
IH
, block lock bit is
set. Only required for
systems implement-
ing lock bit configu-
ration
Check SR4
1 = Programming Error
STANDBY
STANDBY
SR4, SR3, and SR1 are only cleared by the CLEAR
STATUS REGISTER command in cases where
multiple locations are programmed before full
status is checked. If an error is detected, clear the
status register before attempting retry or other
error recovery.
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