參數(shù)資料
型號: MT28F160S3
廠商: Micron Technology, Inc.
英文描述: 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲器)
中文描述: 2梅格× 8 /檢測起× 16智能3閃光(2 M中的x 8月1日M中的x 16閃速存儲器)
文件頁數(shù): 31/39頁
文件大?。?/td> 281K
代理商: MT28F160S3
31
2 Meg x 8 /1 Meg x 16 Even-Sectored Flash Memory
MT28F160S3_2 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2 MEG x 8/1 MEG x 16
SMART 3 EVEN-SECTORED FLASH
PRELIMINARY
Table 16
Valid V
PP
/V
CC
Voltage
V
CC
Voltage
V
CC
1
= 2.7V to 3.6V
V
PP
Voltage
V
PPH
1
= 2.7V to 3.6V,
V
PPH
2
= 3.0V to 3.6V, or
V
PPH
3
= 4.5V to 5.5V
V
PPH
2
= 3.0V to 3.6V or
V
PPH
3
= 4.5V to 5.5V
V
CC
2
= 3.0V to 3.6V
Output
Test Points
Input
1.35V
1.35V
2.7V
0.0V
AC test inputs are driven at 2.7V for a logic 1 and 0.0V for a logic 0. Input timing begins and output timing ends at
1.35V. Input rise and fall times (10% to 90%) < 10ns.
Transient Input/Output Reference Waveform for V
CC
= 2.7V–3.6V
Output
Test Points
Input
1.5V
1.5V
3.0V
0.0V
AC test inputs are driven at 3.0V for a logic 1 and 0.0V for a logic 0. Input timing begins and output timing ends at
1.5V. Input rise and fall times (10% to 90%) < 10ns.
Transient Input/Output Reference Waveform for V
CC
= 3.3V ±0.3V (High-Speed Testing Configuration)
Device
Under Test
Out
R
L
= 3.3k
1N914
1.3V
C
L
0608_16
NOTE:
C
L
includes jig capacitance.
Transient Equivalent Testing Load Circuit
Test Configuration Capacitance Loading Value
Test Configuration
C
L
(pF)
V
CC
= 3.3V ±0.3V, 2.7V to 3.6V
50
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