參數(shù)資料
型號: MT28F160S3
廠商: Micron Technology, Inc.
英文描述: 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲器)
中文描述: 2梅格× 8 /檢測起× 16智能3閃光(2 M中的x 8月1日M中的x 16閃速存儲器)
文件頁數(shù): 32/39頁
文件大?。?/td> 281K
代理商: MT28F160S3
32
2 Meg x 8 /1 Meg x 16 Even-Sectored Flash Memory
MT28F160S3_2 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2 MEG x 8/1 MEG x 16
SMART 3 EVEN-SECTORED FLASH
PRELIMINARY
AC CHARACTERISTICS – READ-ONLY OPERATIONS
1
Note 1; Commercial Temperature (0oC
T
A
+70oC) and Extended Temperature (-40oC
T
A
+85oC)
3.3V ±0.3V V
CC
-75
MIN
75
2.7V–3.6V V
CC
-10
MIN
100
PARAMETER
READ/WRITE Cycle Time 1
Address to Output Delay
CEx# to Output Delay
OE# to Output Delay
RP# HIGH to Output Delay
CEx# to Output in Low-Z
OE# to Output in Low-Z
CEx# HIGH to Output in High-Z
OE# HIGH to Output in High-Z
Output Hold from Address, CEx#, or OE# change,
whichever occurs first
CEx# LOW to BYTE# HIGH or LOW
BYTE# to Output Delay
BYTE# to Output in High-Z
SYMBOL
t
RC
t
AA
t
ACE
t
AOE
t
RWH
t
OEC
t
OEO
t
ODC
t
ODO
t
OH
MAX
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
75
75
45
600
100
100
50
600
2
3
3
0
0
0
0
4
4
4
4
4
50
20
50
20
0
0
t
CB
t
ABY
t
ODB
5
5
ns
ns
ns
4
4
4
100
30
120
30
NOTE:
1. See READ, WRITE, and RESET Timing Diagrams for testing characteristics.
2. See AC Input/Output Reference Waveform for maximum allowable input slew rate.
3. OE# may be delayed up to
t
ACE -
t
AOE after the falling edge of CEx# without impact on
t
ACE.
4. Sampled, not 100% tested.
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