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參數(shù)資料
| 型號(hào)： | MT28F160S3 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲(chǔ)器) |
| 中文描述： | 2梅格× 8 /檢測起× 16智能3閃光（2 M中的x 8月1日M中的x 16閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 26/39頁 |
| 文件大?。?/td> | 281K |
| 代理商： | MT28F160S3 |
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26
2 Meg x 8 /1 Meg x 16 Even-Sectored Flash Memory
MT28F160S3_2 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2 MEG x 8/1 MEG x 16
SMART 3 EVEN-SECTORED FLASH
PRELIMINARY
Write 60h
Block/Device Address
Start
Read Status Register
Write 01h
Block/Device Address
SR7=
Full Status Check
if Desired
SR4=
SET BLOCK LOCK BITS
Complete
SR1=
SR3=
Read Status Register Data
(see above)
Voltage Range Error
Device Protect Error
SET BLOCK LOCK BITS
Error
0
0
0
0
1
1
1
SR4, 5=
Command Sequence
Error
1
0
SET BLOCK LOCK BITS
Complete
FULL STATUS CHECK PROCEDURE
1
Figure 8
SET BLOCK LOCK BITS Flow chart
BUS
OPERATION COMMAND
WRITE
COMMENTS
CLEAR BLOCK Data = 60h
LOCK BITS
SETUP
SET BLOCK
LOCK BITS
CONFIRM
Addr = X
WRITE
Data = 01h
Addr = X
READ
STANDBY
Status Register Data
Check SR7
1 = ISM Ready
0 = ISM Busy
Full status check can be done after each SET BLOCK
LOCK BITS operation or a sequence of block lock
bits set.
Write FFh after the last SET BLOCK LOCK BITS
operation to place the device in array mode.
BUS
OPERATION COMMAND COMMENTS
STANDBY
Check SR3
1 = Programming Voltage
Error Detect
Check SR1
1 = Device Protect Detect
WP# = V
IL
Check SR4, SR5
Both 1 = Command
Sequence Error
Check SR5
1 = Set Block Lock Bits
STANDBY
STANDBY
STANDBY
SR5, SR4, SR3, and SR1 are only cleared by the
CLEAR REGISTER command in cases where multiple
lock bits are set full status.
If an error is detected, clear the status register
before attempting retry or other error recovery.
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| MT28F200B3 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FLASH MEMORY |
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