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參數(shù)資料
| 型號： | MT28F160S3 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲器) |
| 中文描述： | 2梅格× 8 /檢測起× 16智能3閃光（2 M中的x 8月1日M中的x 16閃速存儲器） |
| 文件頁數(shù)： | 36/39頁 |
| 文件大?。?/td> | 281K |
| 代理商： | MT28F160S3 |
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36
2 Meg x 8 /1 Meg x 16 Even-Sectored Flash Memory
MT28F160S3_2 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2 MEG x 8/1 MEG x 16
SMART 3 EVEN-SECTORED FLASH
PRELIMINARY
ERASE, WRITE, AND LOCK BIT CONFIGURATION PERFORMANCE
Notes: 1, 2
3.3V ±0.3V V
CC
TYP
3
5.66
2.7V–3.6V V
CC
TYP
3
5.8
PARAMETER
Byte/word program time
(using write buffer)
Per byte program time
(without write buffer)
Per word program time
(without write buffer)
Block program time
(byte mode)
Block program time
(word mode)
Block program time
(using write buffer)
Block erase time
Full chip erase time
Set lock bit time
Clear block lock bits time
Program suspend latency time to read
Erase suspend latency time to read
SYMBOL
t
WED1
MAX
4
250
MAX
4
250
UNITS
μs
NOTES
5
t
WED2
19.51
250
18.0
160
μs
6
t
WED3
21.75
250
20.0
190
μs
6
t
WED4
1.6
16.5
1.2
2.0
sec
6
t
WED5
0.89
8.2
0.7
1.0
sec
6
t
WED6
0.36
4.1
0.37
4.0
sec
6
t
WED7
t
WED8
t
WED9
t
WED10
t
LPS
t
LES
0.55
17.6
22.75
0.55
7.1
15.2
20
320
250
10
10
21.1
0.56
17.9
20.0
0.56
7.2
15.5
6.0
190
190
6.0
10
21.5
sec
sec
μs
sec
μs
μs
6
6
6
NOTE:
1. These performance numbers are valid for all speed versions.
2. Sampled, but not 100% tested.
3. Typical values measured at T
A
= +25oC and nominal voltages. Assumes corresponding lock bits are not set. Subject to
change based on device characterization.
4. Maximum values represent less than 1% of units exposed to greater than 100,000 cycles.
5. Uses whole buffer.
6. Excludes system-level overhead.
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