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參數(shù)資料
| 型號： | MT28F160S3 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲器) |
| 中文描述： | 2梅格× 8 /檢測起× 16智能3閃光（2 M中的x 8月1日M中的x 16閃速存儲器） |
| 文件頁數(shù)： | 10/39頁 |
| 文件大?。?/td> | 281K |
| 代理商： | MT28F160S3 |
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10
2 Meg x 8 /1 Meg x 16 Even-Sectored Flash Memory
MT28F160S3_2 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2 MEG x 8/1 MEG x 16
SMART 3 EVEN-SECTORED FLASH
PRELIMINARY
Table 5
Query Structure
1
OFFSET
00h
01h
(BA+2)h
2
04-0Fh
10h
1Bh
27h
P
3
SUBSECTION NAME
DESCRIPTION
Manufacturer code
Device code
Block-specific information
Reserved for vendor-specific information
Command set ID and vendor data offset
Device timing and voltage information
Flash device layout
Vendor-defined additional information
specific to the primary vendor algorithm
Block Status Register
Reserved
CFI Query Identification String
System Interface Information
Device Geometry Definition
Primary Micron-Specific Extended Query
Table
NOTE:
1. Refer to the Query Structure Output section and Table 3 for the detailed definition of offset address as a function of
device word width and mode.
2. BA = The beginning location of a block address (i.e., 008000h) is the beginning location of block 1 when the block size is
32K-word.
3. Offset 15 defines “ P,” which points to the Primary Extended Query Table.
QUERY STRUCTURE OVERVIEW
The QUERY command allows the flash component
to display the CFI query structure. Table 5 summarizes
the structure subsections and address locations.
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