參數(shù)資料
型號: LPC1751FBD80
廠商: NXP SEMICONDUCTORS
元件分類: 微控制器/微處理器
英文描述: Cortex-M3 with 32 kB flash, 8 kB SRAM, USB 2.0 Device, CAN, 12-bit ADC
中文描述: 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP80
封裝: 12 X 12 MM, 1.40 MM HEIGHT, PLASTIC, MS-026, SOT315-1, 80 PIN
文件頁數(shù): 48/74頁
文件大小: 1572K
代理商: LPC1751FBD80
LPC1759_58_56_54_52_51
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 29 March 2011
48 of 74
NXP Semiconductors
LPC1759/58/56/54/52/51
32-bit ARM Cortex-M3 microcontroller
11. Dynamic characteristics
11.1 Flash memory
[1]
Number of program/erase cycles.
[2]
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes.
11.2 External clock
[1]
Parameters are valid over operating temperature range unless otherwise specified.
[2]
Typical ratings are not guaranteed. The values listed are at room temperature (25
C), nominal supply voltages.
Table 8.
T
amb
=
40
C to +85
C, unless otherwise specified.
Symbol
Parameter
N
endu
endurance
t
ret
retention time
Flash characteristics
Conditions
Min
Typ
100000
-
-
100
Max
-
-
-
105
Unit
cycles
years
years
ms
[1]
10000
10
20
95
powered
unpowered
sector or multiple
consecutive sectors
t
er
erase time
t
prog
programming time
[2]
0.95
1
1.05
ms
Table 9.
T
amb
=
40
C to +85
C; V
DD(3V3)
over specified ranges.
[1]
Symbol
Parameter
f
osc
oscillator frequency
T
cy(clk)
clock cycle time
t
CHCX
clock HIGH time
t
CLCX
clock LOW time
t
CLCH
clock rise time
t
CHCL
clock fall time
Dynamic characteristic: external clock
Conditions
Min
1
Typ
[2]
-
Max
25
Unit
MHz
40
T
cy(clk)
0.4
T
cy(clk)
0.4
-
-
-
-
-
-
-
1000
-
-
5
5
ns
ns
ns
ns
ns
Fig 14. External clock timing (with an amplitude of at least V
i(RMS)
= 200 mV)
t
CHCL
t
CLCX
t
CHCX
t
CLCH
T
cy(clk)
002aaa907
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