參數(shù)資料
型號(hào)： K9WAG08U1M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
中文描述： 1克× 8位/第二代× 8位NAND閃存
文件頁(yè)數(shù)： 7/49頁(yè)
文件大?。?/td> 1215K
代理商： K9WAG08U1M
FLASH MEMORY
7
Preliminary
K9
WA
G08U1M
K9K8G08U0M
PIN DESCRIPTION
NOTE
: Connect all V
CC
and V
SS
pins of each device to common power supply outputs.
Do not leave V
CC
or V
SS
disconnected.
Pin Name
Pin Function
I/O
0
~ I/O
7
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The I/
O pins float to high-z when the chip is deselected or when the outputs are disabled.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ALE
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CE / CE1
CHIP ENABLE
The CE / CE1 input is the device selection control. When the device is in the Busy state, CE / CE1 high is
ignored, and the device does not return to standby mode in program or erase operation.
Regarding CE / CE1 control during read operation , refer to ’Page Read’ section of Device operation.
CE2
CHIP ENABLE
The CE2 input enables the second K9K8G08U0M
RE
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WE
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WP
WRITE PROTECT
The WP pin provides inadvertent program/erase protection during power transitions. The internal high volt-
age generator is reset when the WP pin is active low.
R/B / R/B1
READY/BUSY OUTPUT
The R/B / R/B1 output indicates the status of the device operation. When low, it indicates that a program,
erase or random read operation is in process and returns to high state upon completion. It is an open drain
output and does not float to high-z condition when the chip is deselected or when outputs are disabled.
Vcc
POWER
V
CC
is the power supply for device.
Vss
GROUND
N.C
NO CONNECTION
Lead is not internally connected.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9WBG08U1M-PCB0000 制造商:Samsung SDI 功能描述:PN may be NE NA
K9WBG08U1M-PCB0T00 制造商:Samsung 功能描述:SLC 8GB 32GB QDP X8 3.3 TSOP1 - Tape and Reel
K9WBG08U1M-PCK0000 制造商:Samsung SDI 功能描述:
K9WBG08U1M-PCK0T00 制造商:Samsung 功能描述:SLC 8GB 32GB QDP X8 3.3 TSOP1 TR - Tape and Reel
K9WBG08U1M-PIB0000 制造商:Samsung SDI 功能描述:
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