參數(shù)資料
型號: K9WAG08U1M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
中文描述: 1克× 8位/第二代× 8位NAND閃存
文件頁數(shù): 28/49頁
文件大小: 1215K
代理商: K9WAG08U1M
FLASH MEMORY
28
Preliminary
K9
WA
G08U1M
K9K8G08U0M
Read Operation
(Intercepted by CE)
CE
CLE
R/B
WE
ALE
RE
Busy
00h
Dout N
Dout N+1
Dout N+2
Row Address
Column Address
t
WB
t
AR
t
CHZ
t
C
OH
t
R
t
RR
t
RC
30h
Read Operation
CE
CLE
R/B
WE
ALE
RE
Busy
00h
Col. Add1
Col. Add2
Row Add1
Dout N
Dout N+1
Column Address
Row Address
t
WB
t
AR
t
R
t
RC
t
RHZ
t
RR
Dout M
t
WC
Row Add2
30h
t
CLR
I/Ox
I/Ox
Col. Add1
Col. Add2
Row Add1
Row Add2
Row Add3
Row Add3
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
K9WBG08U1M-PCB0000 制造商:Samsung SDI 功能描述:PN may be NE NA
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K9WBG08U1M-PCK0000 制造商:Samsung SDI 功能描述:
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K9WBG08U1M-PIB0000 制造商:Samsung SDI 功能描述: