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參數(shù)資料
| 型號： | K9WAG08U1M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory |
| 中文描述： | 1克× 8位/第二代× 8位NAND閃存 |
| 文件頁數(shù)： | 3/49頁 |
| 文件大?。?/td> | 1215K |
| 代理商： | K9WAG08U1M |
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FLASH MEMORY
3
Preliminary
K9
WA
G08U1M
K9K8G08U0M
GENERAL DESCRIPTION
Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200
μ
s on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0M
′
s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0M is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package.
FEATURES
Voltage Supply
- 2.70V ~ 3.60V
Organization
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (2K + 64) x 8bit
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 20
μ
s(Max.)
- Serial Access : 25ns(Min.)
1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
Fast Write Cycle Time
- Page Program time : 200
μ
s(Typ.)
- Block Erase Time : 1.5ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
(
with 1bit/512Byte
ECC)
- Data Retention : 10 Years
Command Driven Operation
Intelligent Copy-Back with internal 1bit/528Byte EDC
Unique ID for Copyright Protection
Package :
- K9K8G08U0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9K8G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1M-ICB0/IIB0
52 - Pin TLGA (12 x 17 / 1.0 mm pitch)
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9K8G08U0M-Y,P
2.70 ~ 3.60V
X8
TSOP1
K9
WA
G08U1M-Y,P
K9
WA
G08U1M-I
52TLGA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9S2808V0B | TV 29C 29#16 PIN RECP |
| K9S6408V0B | SmartMedia CARD |
| K9S6408V0C | SmartMedia CARD |
| K9S3208V0A | 4M x 8 bit SmartMedia Card |
| K9S3208V0A-SSB0 | 4M x 8 bit SmartMedia Card |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9WBG08U1M-PCB0000 | 制造商:Samsung SDI 功能描述:PN may be NE NA |
| K9WBG08U1M-PCB0T00 | 制造商:Samsung 功能描述:SLC 8GB 32GB QDP X8 3.3 TSOP1 - Tape and Reel |
| K9WBG08U1M-PCK0000 | 制造商:Samsung SDI 功能描述: |
| K9WBG08U1M-PCK0T00 | 制造商:Samsung 功能描述:SLC 8GB 32GB QDP X8 3.3 TSOP1 TR - Tape and Reel |
| K9WBG08U1M-PIB0000 | 制造商:Samsung SDI 功能描述: |
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