參數(shù)資料
型號(hào): K9WAG08U1M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
中文描述: 1克× 8位/第二代× 8位NAND閃存
文件頁(yè)數(shù): 24/49頁(yè)
文件大?。?/td> 1215K
代理商: K9WAG08U1M
FLASH MEMORY
24
Preliminary
K9
WA
G08U1M
K9K8G08U0M
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte
data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or
audio applications which use slow cycle time on the order of
μ
-seconds, de-activating CE during the data-loading and serial access
would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Address(5Cycles)
80h
Data Input
CE
CLE
ALE
WE
Data Input
CE don’t-care
10h
Address(5Cycle)
00h
CE
CLE
ALE
WE
Data Output(serial access)
CE don’t-care
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
0
~
7
Figure 5. Read Operation with CE don’t-care.
30h
I/Ox
I/Ox
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9WBG08U1M-PCB0000 制造商:Samsung SDI 功能描述:PN may be NE NA
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K9WBG08U1M-PCK0000 制造商:Samsung SDI 功能描述:
K9WBG08U1M-PCK0T00 制造商:Samsung 功能描述:SLC 8GB 32GB QDP X8 3.3 TSOP1 TR - Tape and Reel
K9WBG08U1M-PIB0000 制造商:Samsung SDI 功能描述: