參數(shù)資料
型號(hào): K9WAG08U1M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
中文描述: 1克× 8位/第二代× 8位NAND閃存
文件頁數(shù): 30/49頁
文件大小: 1215K
代理商: K9WAG08U1M
FLASH MEMORY
30
Preliminary
K9
WA
G08U1M
K9K8G08U0M
Page Program Operation
CE
CLE
R/B
WE
ALE
RE
80h
70h
I/O
0
Din
N
1 up to m Byte
Serial Input
Din
M
10h
SerialData
Input Command
Column Address
Row Address
Program
Command
Read Status
Command
I/O
0
=0 Successful Program
I/O
0
=1 Error in Program
t
PROG
t
WB
t
WC
t
WC
t
WC
I/Ox
Co.l Add1
Col. Add2
Row Add1
Row Add2 Row Add3
NOTES :
tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
t
ADL
t
WHR
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