參數(shù)資料
型號： K9WAG08U1M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
中文描述： 1克× 8位/第二代× 8位NAND閃存
文件頁數(shù)： 17/49頁
文件大小： 1215K
代理商： K9WAG08U1M
FLASH MEMORY
17
Preliminary
K9
WA
G08U1M
K9K8G08U0M
Erase Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00h
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
NAND Flash Technical Notes
(Continued)
Write 30h
Block Replacement
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
Buffer memory of the controller.
1st
～
Block A
Block B
(n-1)th
nth
(page)
{
1st
(n-1)th
nth
(page)
{
an error occurs.
1
2
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相關代理商/技術參數(shù)
參數(shù)描述
K9WBG08U1M-PCB0000 制造商:Samsung SDI 功能描述:PN may be NE NA
K9WBG08U1M-PCB0T00 制造商:Samsung 功能描述:SLC 8GB 32GB QDP X8 3.3 TSOP1 - Tape and Reel
K9WBG08U1M-PCK0000 制造商:Samsung SDI 功能描述:
K9WBG08U1M-PCK0T00 制造商:Samsung 功能描述:SLC 8GB 32GB QDP X8 3.3 TSOP1 TR - Tape and Reel
K9WBG08U1M-PIB0000 制造商:Samsung SDI 功能描述:
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