參數(shù)資料
型號： K9T1G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128M x 8 Bits NAND Flash Memory
中文描述： 128M的x 8位NAND閃存
文件頁數(shù)： 9/38頁
文件大小： 888K
代理商： K9T1G08U0M
FLASH MEMORY
9
K9T1G08U0M
Preliminary
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Notes :
1. Typical values are measured at Vcc=3.3V, T
A
=25
°
C. And not 100% tested.
Paramete
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Sequential Read
I
CC
1
tRC=50ns, CE=V
IL,
I
OUT
=0mA
-
10
20
mA
Program
I
CC
2
-
-
10
20
Erase
I
CC
3
-
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
Input High Voltage
V
IH
I/O pins
2.0
-
V
CCQ
+0.3
V
Except I/O pins
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.8
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND at the condision of K9T1G08U0M-XCB0
:
T
A
=0 to 70
°
C or K9T1G08U0M-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.3
3.6
V
V
CCQ
2.7
3.3
3.6
V
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
V
IN/OUT
-0.6 to +4.6
V
V
CC/
V
CCQ
-0.6 to +4.6
Temperature Under Bias
K9T1G08U0M-XCB0
T
BIAS
-10 to +125
°
C
K9T1G08U0M-XIB0
-40 to +125
Storage Temperature
T
STG
-65 to +150
°
C
Short Circuit Current
I
OS
5
mA
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