參數(shù)資料
型號: K9T1G08U0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128M x 8 Bits NAND Flash Memory
中文描述: 128M的x 8位NAND閃存
文件頁數(shù): 12/38頁
文件大小: 888K
代理商: K9T1G08U0M
FLASH MEMORY
12
K9T1G08U0M
Preliminary
NAND Flash Technical Notes
Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung.
The information regarding the initial invalid block(s) is so called as the initial invalid block information. Devices with initial invalid
block(s) have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid
block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a
select transistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is
placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction up to 1K Program/Erase
cycles.
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The
initial invalid block(s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of
every initial invalid block has non-FFh data at the column address of 517. Since the initial invalid block information is also erasable
in most cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize
the initial invalid block(s) based on the initial invalid block information and create the initial invalid block table via the following sug-
gested flow chart(Figure 4). Any intentional erasure of the initial invalid block information is prohibited.
*
Check "FFh" at the column address 517
of the 1st and 2nd page in the block
Figure 4. Flow chart to create initial invalid block table.
Start
Set Block Address = 0
Check "FFh"
Increment Block Address
Last Block
End
No
Yes
Yes
Create (or update)
Initial Invalid Block(s) Table
No
相關(guān)PDF資料
PDF描述
KA10R25 TSS KA Series
KA1222 DUAL LOW NOISE EQUALIZER AMPLIFIER
KA1H0165R Fairchild Power Switch(FPS)
KA1H0165R-TU Fairchild Power Switch(FPS)
KA1H0165R-YDTU Fairchild Power Switch(FPS)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9T1G08U0M-YIB0000 制造商:Samsung Semiconductor 功能描述:1GB SLC SINGLE (S/B X8 TSOP1 - Trays
K9VGMV 制造商:Micro-Star International 功能描述:- Bulk
K9VGM-V 制造商:Micro-Star International 功能描述:AMD ATHLON 64/1000MHZ FSB/AM2/VIA 58M890 - Bulk
K9W4G08U1M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W4G08U1M-YCB000 制造商:Samsung Semiconductor 功能描述: