參數(shù)資料
型號: K9T1G08U0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128M x 8 Bits NAND Flash Memory
中文描述: 128M的x 8位NAND閃存
文件頁數(shù): 22/38頁
文件大?。?/td> 888K
代理商: K9T1G08U0M
FLASH MEMORY
22
K9T1G08U0M
Preliminary
BLOCK ERASE OPERATION
(ERASE ONE BLOCK)
CE
CLE
R/B
I/O
X
WE
ALE
RE
60h
A
17
~ A
24
A
9
~ A
16
Erase Setup Command
Erase Command
Read Status
Command
I/O
0
=1 Error in Erase
DOh
70h
I/O 0
Busy
t
WB
t
BERS
I/O
0
=0 Successful Erase
Page(Row)
Address
t
WC
A
25
~ A
26
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