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參數(shù)資料
| 型號(hào)： | K9T1G08U0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128M x 8 Bits NAND Flash Memory |
| 中文描述： | 128M的x 8位NAND閃存 |
| 文件頁(yè)數(shù)： | 38/38頁(yè) |
| 文件大?。?/td> | 888K |
| 代理商： | K9T1G08U0M |
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FLASH MEMORY
38
K9T1G08U0M
Preliminary
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
IL
during power-up and power-down. A recovery time of minimum 10
μ
s is required before internal circuit gets ready for any command
sequences as shown in Figure 24. The two step command sequence for program/erase provides additional software protection.
Figure 24. AC Waveforms for Power Transition
V
CC
WP
High
≈
≈
WE
Data Protection & Power-up sequence
~ 2.5V
~ 2.5V
10
μ
s
≈
≈
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