參數(shù)資料
型號： K9T1G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128M x 8 Bits NAND Flash Memory
中文描述： 128M的x 8位NAND閃存
文件頁數(shù)： 14/38頁
文件大?。?/td> 888K
代理商： K9T1G08U0M
FLASH MEMORY
14
K9T1G08U0M
Preliminary
Erase Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00h
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
NAND Flash Technical Notes
(Continued)
Block Replacement
* Step1. When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2. Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3. Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4. Do not further erase Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
Buffer memory of the controller.
1st
Block A
Block B
(n-1)th
nth
(page)
1
2
{
1st
～
(n-1)th
nth
(page)
{
an error occurs.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9T1G08U0M-YIB0000 制造商:Samsung Semiconductor 功能描述:1GB SLC SINGLE (S/B X8 TSOP1 - Trays
K9VGMV 制造商:Micro-Star International 功能描述:- Bulk
K9VGM-V 制造商:Micro-Star International 功能描述:AMD ATHLON 64/1000MHZ FSB/AM2/VIA 58M890 - Bulk
K9W4G08U1M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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