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參數(shù)資料
| 型號(hào)： | K9T1G08U0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128M x 8 Bits NAND Flash Memory |
| 中文描述： | 128M的x 8位NAND閃存 |
| 文件頁數(shù)： | 8/38頁 |
| 文件大?。?/td> | 888K |
| 代理商： | K9T1G08U0M |
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FLASH MEMORY
8
K9T1G08U0M
Preliminary
The device is arranged in four 256Mbits memory planes. Each plane contains 2,048 blocks and 528 bytes page register. This allows
it to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that multi-plane program/erase operations can be executed for every four sequential blocks.
Plane 0
(2,048 Blocks)
Plane 1
(2,048 Blocks)
Plane 2
(2,048 Blocks)
Plane 3
(2,048 Blocks)
Page 0
Page 1
Page 31
Page 30
Memory Map
Block 0
Page 0
Page 1
Page 31
Page 30
Block 1
Page 0
Page 1
Page 31
Page 30
Block 2
Page 0
Page 1
Page 31
Page 30
Block 3
Page 0
Page 1
Page 31
Page 30
Block 4
Page 0
Page 1
Page 31
Page 30
Block 5
Page 0
Page 1
Page 31
Page 30
Block 6
Page 0
Page 1
Page 31
Page 30
Block 7
Page 0
Page 1
Page 31
Page 30
Block 8,184
Page 0
Page 1
Page 31
Page 30
Block 8,185
Page 0
Page 1
Page 31
Page 30
Block 8,186
Page 0
Page 1
Page 31
Page 30
Block 8,187
Page 0
Page 1
Page 31
Page 30
Block 8,188
Page 0
Page 1
Page 31
Page 30
Block 8,189
Page 0
Page 1
Page 31
Page 30
Block 8,190
Page 0
Page 1
Page 31
Page 30
Block 8,191
528bytes Page Register
Figure 3. Memory Array Map
528bytes Page Register
528bytes Page Register
528bytes Page Register
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9T1G08U0M-YIB0000 | 制造商:Samsung Semiconductor 功能描述:1GB SLC SINGLE (S/B X8 TSOP1 - Trays |
| K9VGMV | 制造商:Micro-Star International 功能描述:- Bulk |
| K9VGM-V | 制造商:Micro-Star International 功能描述:AMD ATHLON 64/1000MHZ FSB/AM2/VIA 58M890 - Bulk |
| K9W4G08U1M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9W4G08U1M-YCB000 | 制造商:Samsung Semiconductor 功能描述: |
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