參數(shù)資料
型號： K9T1G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128M x 8 Bits NAND Flash Memory
中文描述： 128M的x 8位NAND閃存
文件頁數(shù)： 28/38頁
文件大?。?/td> 888K
代理商： K9T1G08U0M
FLASH MEMORY
28
K9T1G08U0M
Preliminary
Figure 8-2. Read2 Operation
50h
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
Start Add.(4Cycle)
I/O
X
RE
Figure 9. Sequential Row Read1 Operation
00h
01h
A
0
~ A
7
& A
9
~ A
26
I/O
X
R/B
Start Add.(4Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(528 Byte)
(528 Byte)
t
R
t
R
t
R
t
R
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
≈
( 00h Command)
Data Field
Spare Field
( 01h Command)
Data Field
Spare Field
1st half array 2nd half array
1st
2nd
Nth
1st half array 2nd half array
1st
2nd
Nth
Block
A
0
~ A
3
& A
9
~ A
26
(A
4
~ A
7
: Don’t care)
Main array
Data Field
Spare Field
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