參數資料
型號: HB52R329E2
廠商: Hitachi,Ltd.
英文描述: 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
中文描述: 注冊使用256 MB SDRAM的內存(256 MB的寄存同步的DRAM內存)
文件頁數: 46/67頁
文件大?。?/td> 630K
代理商: HB52R329E2
HB52R329E2-D
46
Read with auto precharge to Write command interval
1. Different bank:
When some banks are in the active state, the second write command (another bank) is
executed. However, DQMB must be set High so that the output buffer becomes High-Z before data input.
The internal auto-precharge of one bank starts at the next clock of the second command.
Read with Auto Precharge to Write Command Interval
(Different bank)
CK
Command
BA
Dout
Din
CL = 3
CL = 4
READ A
WRIT
in B0
in B1
in B2
in B3
Burst Length = 4
bank0
Read A
bank3
Write
Note: Internal auto-precharge starts at the timing indicated by " ".
DQMB
High-Z
2. Same bank:
The consecutive write command from read with auto precharge (the same bank) is illegal.
It is necessary to separate the two commands with a bank active command.
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